Base transit time of Si/SiGe heterojunction bipolar transistor

Wen Yong Su; Rui Li; Bin Shao

Base transit time of Si/SiGe heterojunction bipolar transistor

Wen Yong Su^*, Rui Li, Bin Shao

^*Corresponding author for this work

School of Physics

Beijing Institute of Technology

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The base transit time of SiGe heterojunction bipolar transistor (HBT) is calculated and analysed. The effects on the intrinsic carrier concentration of the SiGe base and the electron mobility are considered which are caused by the base doping and Ge profile. The transit time of currents induced base (CIB) at the high current density is also considered. The results show that the box-triangular Ge profile with X₁/W_b≈0.12 gives the minimum base transit time, Ge profile has little effect on the effective density of states and quite an effect on the electron mobility, and it has little effect on the base transit time whether the base doping profile is exponential or Gaussian.

Original language	English
Pages (from-to)	522-525
Number of pages	4
Journal	Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology
Volume	25
Issue number	6
Publication status	Published - Jun 2005

Keywords

Base transit time
Ge profile
SiGe heterojunction bipolar transistor

Cite this

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title = "Base transit time of Si/SiGe heterojunction bipolar transistor",

abstract = "The base transit time of SiGe heterojunction bipolar transistor (HBT) is calculated and analysed. The effects on the intrinsic carrier concentration of the SiGe base and the electron mobility are considered which are caused by the base doping and Ge profile. The transit time of currents induced base (CIB) at the high current density is also considered. The results show that the box-triangular Ge profile with X1/Wb≈0.12 gives the minimum base transit time, Ge profile has little effect on the effective density of states and quite an effect on the electron mobility, and it has little effect on the base transit time whether the base doping profile is exponential or Gaussian.",

keywords = "Base transit time, Ge profile, SiGe heterojunction bipolar transistor",

author = "Su, {Wen Yong} and Rui Li and Bin Shao",

year = "2005",

month = jun,

language = "English",

volume = "25",

pages = "522--525",

journal = "Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology",

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T1 - Base transit time of Si/SiGe heterojunction bipolar transistor

AU - Su, Wen Yong

AU - Li, Rui

AU - Shao, Bin

PY - 2005/6

Y1 - 2005/6

N2 - The base transit time of SiGe heterojunction bipolar transistor (HBT) is calculated and analysed. The effects on the intrinsic carrier concentration of the SiGe base and the electron mobility are considered which are caused by the base doping and Ge profile. The transit time of currents induced base (CIB) at the high current density is also considered. The results show that the box-triangular Ge profile with X1/Wb≈0.12 gives the minimum base transit time, Ge profile has little effect on the effective density of states and quite an effect on the electron mobility, and it has little effect on the base transit time whether the base doping profile is exponential or Gaussian.

AB - The base transit time of SiGe heterojunction bipolar transistor (HBT) is calculated and analysed. The effects on the intrinsic carrier concentration of the SiGe base and the electron mobility are considered which are caused by the base doping and Ge profile. The transit time of currents induced base (CIB) at the high current density is also considered. The results show that the box-triangular Ge profile with X1/Wb≈0.12 gives the minimum base transit time, Ge profile has little effect on the effective density of states and quite an effect on the electron mobility, and it has little effect on the base transit time whether the base doping profile is exponential or Gaussian.

KW - Base transit time

KW - Ge profile

KW - SiGe heterojunction bipolar transistor

UR - http://www.scopus.com/inward/record.url?scp=23044479757&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:23044479757

SN - 1001-0645

VL - 25

SP - 522

EP - 525

JO - Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology

JF - Beijing Ligong Daxue Xuebao/Transaction of Beijing Institute of Technology

IS - 6

ER -

Base transit time of Si/SiGe heterojunction bipolar transistor

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Keywords

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