A Solution-Processed High-Performance Phototransistor based on a Perovskite Composite with Chemically Modified Graphenes

Liu Qian; Yilin Sun; Mingmao Wu; Dan Xie; Liming Ding; Gaoquan Shi

doi:10.1002/adma.201606175

A Solution-Processed High-Performance Phototransistor based on a Perovskite Composite with Chemically Modified Graphenes

Liu Qian, Yilin Sun, Mingmao Wu, Dan Xie^*, Liming Ding, Gaoquan Shi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

86 Citations (Scopus)

Abstract

Phototransistors with a structure of a nitrogen-doped graphene quantum dots (NGQDs)–perovskite composite layer and a mildly reduced graphene oxide (mrGO) layer are fabricated through a solution-processing method. This hybrid phototransistor exhibits broad detection range (from 365 to 940 nm), high photoresponsivity (1.92 × 10⁴ A W⁻¹), and rapid response to light on–off (≈10 ms). NGQDs offer an effective and fast path for electron transfer from the perovskite to the mrGO, resulting in the improvement of photocurrent and photoswitching characteristics. The high photoresponsivity can also be ascribed to a photogating effect in the device. In addition, the phototransistor shows good stability with poly(methyl methacrylate) encapsulation, and can maintain 85% of its initial performance for 20 d in ambient air.

Original language	English
Article number	1606175
Journal	Advanced Materials
Volume	29
Issue number	22
DOIs	https://doi.org/10.1002/adma.201606175
Publication status	Published - 13 Jun 2017
Externally published	Yes

Keywords

graphene oxide
perovskites
phototransistors
quantum dots

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10.1002/adma.201606175

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abstract = "Phototransistors with a structure of a nitrogen-doped graphene quantum dots (NGQDs)–perovskite composite layer and a mildly reduced graphene oxide (mrGO) layer are fabricated through a solution-processing method. This hybrid phototransistor exhibits broad detection range (from 365 to 940 nm), high photoresponsivity (1.92 × 104 A W−1), and rapid response to light on–off (≈10 ms). NGQDs offer an effective and fast path for electron transfer from the perovskite to the mrGO, resulting in the improvement of photocurrent and photoswitching characteristics. The high photoresponsivity can also be ascribed to a photogating effect in the device. In addition, the phototransistor shows good stability with poly(methyl methacrylate) encapsulation, and can maintain 85% of its initial performance for 20 d in ambient air.",

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AU - Qian, Liu

AU - Sun, Yilin

AU - Wu, Mingmao

AU - Xie, Dan

AU - Ding, Liming

AU - Shi, Gaoquan

PY - 2017/6/13

Y1 - 2017/6/13

N2 - Phototransistors with a structure of a nitrogen-doped graphene quantum dots (NGQDs)–perovskite composite layer and a mildly reduced graphene oxide (mrGO) layer are fabricated through a solution-processing method. This hybrid phototransistor exhibits broad detection range (from 365 to 940 nm), high photoresponsivity (1.92 × 104 A W−1), and rapid response to light on–off (≈10 ms). NGQDs offer an effective and fast path for electron transfer from the perovskite to the mrGO, resulting in the improvement of photocurrent and photoswitching characteristics. The high photoresponsivity can also be ascribed to a photogating effect in the device. In addition, the phototransistor shows good stability with poly(methyl methacrylate) encapsulation, and can maintain 85% of its initial performance for 20 d in ambient air.

AB - Phototransistors with a structure of a nitrogen-doped graphene quantum dots (NGQDs)–perovskite composite layer and a mildly reduced graphene oxide (mrGO) layer are fabricated through a solution-processing method. This hybrid phototransistor exhibits broad detection range (from 365 to 940 nm), high photoresponsivity (1.92 × 104 A W−1), and rapid response to light on–off (≈10 ms). NGQDs offer an effective and fast path for electron transfer from the perovskite to the mrGO, resulting in the improvement of photocurrent and photoswitching characteristics. The high photoresponsivity can also be ascribed to a photogating effect in the device. In addition, the phototransistor shows good stability with poly(methyl methacrylate) encapsulation, and can maintain 85% of its initial performance for 20 d in ambient air.

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A Solution-Processed High-Performance Phototransistor based on a Perovskite Composite with Chemically Modified Graphenes

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Keywords

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