A High-Efficiency Push-Pull Parallel-Circuit Class-E/F3 Power Amplifier for Harmonic Suppression

Heng Lu; Jianliang Jiang; Hengli Zhang

doi:10.1109/LMWT.2024.3442206

A High-Efficiency Push-Pull Parallel-Circuit Class-E/F₃ Power Amplifier for Harmonic Suppression

Heng Lu, Jianliang Jiang^*, Hengli Zhang

^*Corresponding author for this work

School of Optics and Photonics

Beijing Institute of Technology

Research output: Contribution to journal › Article › peer-review

Abstract

In this article, a high-efficiency push-pull parallel-circuit (PC) Class-E/F3 power amplifier (PA) with a harmonic suppression network for radio frequency identification (RFID) applications is presented. With the double reactance compensation technique (D-RCT), the PA's design of broadband performance is achieved. In addition, a low-pass (LP) Chebyshev technique is introduced to provide a simple fundamental matching network (MN). Finally, a high-efficiency push-pull PC Class-E/F3 PA is fabricated and measured. The experimental results illustrate that an output power (Pout) is from 36.83 to 41.84 dBm and 82.35%-91.32% drain efficiency (DE) operating from 5 to 10.5 MHz frequency range, which agrees well with the simulation results.

Original language	English
Pages (from-to)	1170-1173
Number of pages	4
Journal	IEEE Microwave and Wireless Technology Letters
Volume	34
Issue number	10
DOIs	https://doi.org/10.1109/LMWT.2024.3442206
Publication status	Published - 2024

Keywords

Class-E/FâBB
high-efficiency
parallel-circuit (PC)
power amplifier (PA)
push-pull

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10.1109/LMWT.2024.3442206

Cite this

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title = "A High-Efficiency Push-Pull Parallel-Circuit Class-E/F3 Power Amplifier for Harmonic Suppression",

abstract = "In this article, a high-efficiency push-pull parallel-circuit (PC) Class-E/F3 power amplifier (PA) with a harmonic suppression network for radio frequency identification (RFID) applications is presented. With the double reactance compensation technique (D-RCT), the PA's design of broadband performance is achieved. In addition, a low-pass (LP) Chebyshev technique is introduced to provide a simple fundamental matching network (MN). Finally, a high-efficiency push-pull PC Class-E/F3 PA is fabricated and measured. The experimental results illustrate that an output power (Pout) is from 36.83 to 41.84 dBm and 82.35%-91.32% drain efficiency (DE) operating from 5 to 10.5 MHz frequency range, which agrees well with the simulation results.",

keywords = "Class-E/F{\^a}BB, high-efficiency, parallel-circuit (PC), power amplifier (PA), push-pull",

author = "Heng Lu and Jianliang Jiang and Hengli Zhang",

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year = "2024",

doi = "10.1109/LMWT.2024.3442206",

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AU - Lu, Heng

AU - Jiang, Jianliang

AU - Zhang, Hengli

PY - 2024

Y1 - 2024

N2 - In this article, a high-efficiency push-pull parallel-circuit (PC) Class-E/F3 power amplifier (PA) with a harmonic suppression network for radio frequency identification (RFID) applications is presented. With the double reactance compensation technique (D-RCT), the PA's design of broadband performance is achieved. In addition, a low-pass (LP) Chebyshev technique is introduced to provide a simple fundamental matching network (MN). Finally, a high-efficiency push-pull PC Class-E/F3 PA is fabricated and measured. The experimental results illustrate that an output power (Pout) is from 36.83 to 41.84 dBm and 82.35%-91.32% drain efficiency (DE) operating from 5 to 10.5 MHz frequency range, which agrees well with the simulation results.

AB - In this article, a high-efficiency push-pull parallel-circuit (PC) Class-E/F3 power amplifier (PA) with a harmonic suppression network for radio frequency identification (RFID) applications is presented. With the double reactance compensation technique (D-RCT), the PA's design of broadband performance is achieved. In addition, a low-pass (LP) Chebyshev technique is introduced to provide a simple fundamental matching network (MN). Finally, a high-efficiency push-pull PC Class-E/F3 PA is fabricated and measured. The experimental results illustrate that an output power (Pout) is from 36.83 to 41.84 dBm and 82.35%-91.32% drain efficiency (DE) operating from 5 to 10.5 MHz frequency range, which agrees well with the simulation results.

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A High-Efficiency Push-Pull Parallel-Circuit Class-E/F₃ Power Amplifier for Harmonic Suppression

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Keywords

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