Wu, Y., Zheng, P., Peng, J., Xu, M., Chen, Y., Surve, S., Lu, T., Bui, A. D., Li, N., Liang, W., Duan, L., Li, B., Shen, H., Duong, T., Yang, J., Zhang, X., Liu, Y., Jin, H., Chen, Q., ... Weber, K. (2022). 27.6% Perovskite/c-Si Tandem Solar Cells Using Industrial Fabricated TOPCon Device. Advanced Energy Materials, 12(27), Article 2200821. https://doi.org/10.1002/aenm.202200821
Wu, Yiliang ; Zheng, Peiting ; Peng, Jun et al. / 27.6% Perovskite/c-Si Tandem Solar Cells Using Industrial Fabricated TOPCon Device. In: Advanced Energy Materials. 2022 ; Vol. 12, No. 27.
@article{5d22a3f756004c1998bc30bbc2991473,
title = "27.6% Perovskite/c-Si Tandem Solar Cells Using Industrial Fabricated TOPCon Device",
abstract = "The tandem cell structure is the most promising solution for the next generation photovoltaic technology to overcome the single-junction Shockley–Queisser limit. The fabrication of a perovskite/c-Si monolithic tandem device has not yet been demonstrated on a c-Si bottom cell produced from an industrial production line. Here, a c-Si cell with a tunneling oxide passivating contact (TOPCon) structure produced on a production line as the bottom cell of a tandem device, and a top cell featuring solution-processed perovskite films to form the tandem device are used. The c-Si cell features a rough damage etched, but untextured front surface from the wafering processes. To combat the challenge of rough surfaces, several strategies to avoid shunt paths across carrier transport layers, absorber layers, and their interfaces are implemented. Moreover, the origin of reflection loss on this planar structure is investigated and the reflection loss is managed to below 4 mA cm−2. In addition, the source of the voltage loss from the TOPCon bottom cell is identified and the device structure is redesigned to be suitable for tandem applications while still using mass production feasible fabrication methods. Overall, 27.6% efficiency is achieved for a monolithic perovskite/c-Si tandem device, with significant potential for future improvements.",
keywords = "damage etched, industry, perovskites, silicon, tandem",
author = "Yiliang Wu and Peiting Zheng and Jun Peng and Menglei Xu and Yihua Chen and Sachin Surve and Teng Lu and Bui, {Anh Dinh} and Nengxu Li and Wensheng Liang and Leiping Duan and Bairu Li and Heping Shen and The Duong and Jie Yang and Xinyu Zhang and Yun Liu and Hao Jin and Qi Chen and Thomas White and Kylie Catchpole and Huanping Zhou and Klaus Weber",
note = "Publisher Copyright: {\textcopyright} 2022 The Authors. Advanced Energy Materials published by Wiley-VCH GmbH.",
year = "2022",
month = jul,
day = "21",
doi = "10.1002/aenm.202200821",
language = "English",
volume = "12",
journal = "Advanced Energy Materials",
issn = "1614-6832",
publisher = "John Wiley and Sons Inc.",
number = "27",
}
Wu, Y, Zheng, P, Peng, J, Xu, M, Chen, Y, Surve, S, Lu, T, Bui, AD, Li, N, Liang, W, Duan, L, Li, B, Shen, H, Duong, T, Yang, J, Zhang, X, Liu, Y, Jin, H, Chen, Q, White, T, Catchpole, K, Zhou, H & Weber, K 2022, '27.6% Perovskite/c-Si Tandem Solar Cells Using Industrial Fabricated TOPCon Device', Advanced Energy Materials, vol. 12, no. 27, 2200821. https://doi.org/10.1002/aenm.202200821
27.6% Perovskite/c-Si Tandem Solar Cells Using Industrial Fabricated TOPCon Device. / Wu, Yiliang; Zheng, Peiting; Peng, Jun et al.
In:
Advanced Energy Materials, Vol. 12, No. 27, 2200821, 21.07.2022.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - 27.6% Perovskite/c-Si Tandem Solar Cells Using Industrial Fabricated TOPCon Device
AU - Wu, Yiliang
AU - Zheng, Peiting
AU - Peng, Jun
AU - Xu, Menglei
AU - Chen, Yihua
AU - Surve, Sachin
AU - Lu, Teng
AU - Bui, Anh Dinh
AU - Li, Nengxu
AU - Liang, Wensheng
AU - Duan, Leiping
AU - Li, Bairu
AU - Shen, Heping
AU - Duong, The
AU - Yang, Jie
AU - Zhang, Xinyu
AU - Liu, Yun
AU - Jin, Hao
AU - Chen, Qi
AU - White, Thomas
AU - Catchpole, Kylie
AU - Zhou, Huanping
AU - Weber, Klaus
N1 - Publisher Copyright:
© 2022 The Authors. Advanced Energy Materials published by Wiley-VCH GmbH.
PY - 2022/7/21
Y1 - 2022/7/21
N2 - The tandem cell structure is the most promising solution for the next generation photovoltaic technology to overcome the single-junction Shockley–Queisser limit. The fabrication of a perovskite/c-Si monolithic tandem device has not yet been demonstrated on a c-Si bottom cell produced from an industrial production line. Here, a c-Si cell with a tunneling oxide passivating contact (TOPCon) structure produced on a production line as the bottom cell of a tandem device, and a top cell featuring solution-processed perovskite films to form the tandem device are used. The c-Si cell features a rough damage etched, but untextured front surface from the wafering processes. To combat the challenge of rough surfaces, several strategies to avoid shunt paths across carrier transport layers, absorber layers, and their interfaces are implemented. Moreover, the origin of reflection loss on this planar structure is investigated and the reflection loss is managed to below 4 mA cm−2. In addition, the source of the voltage loss from the TOPCon bottom cell is identified and the device structure is redesigned to be suitable for tandem applications while still using mass production feasible fabrication methods. Overall, 27.6% efficiency is achieved for a monolithic perovskite/c-Si tandem device, with significant potential for future improvements.
AB - The tandem cell structure is the most promising solution for the next generation photovoltaic technology to overcome the single-junction Shockley–Queisser limit. The fabrication of a perovskite/c-Si monolithic tandem device has not yet been demonstrated on a c-Si bottom cell produced from an industrial production line. Here, a c-Si cell with a tunneling oxide passivating contact (TOPCon) structure produced on a production line as the bottom cell of a tandem device, and a top cell featuring solution-processed perovskite films to form the tandem device are used. The c-Si cell features a rough damage etched, but untextured front surface from the wafering processes. To combat the challenge of rough surfaces, several strategies to avoid shunt paths across carrier transport layers, absorber layers, and their interfaces are implemented. Moreover, the origin of reflection loss on this planar structure is investigated and the reflection loss is managed to below 4 mA cm−2. In addition, the source of the voltage loss from the TOPCon bottom cell is identified and the device structure is redesigned to be suitable for tandem applications while still using mass production feasible fabrication methods. Overall, 27.6% efficiency is achieved for a monolithic perovskite/c-Si tandem device, with significant potential for future improvements.
KW - damage etched
KW - industry
KW - perovskites
KW - silicon
KW - tandem
UR - http://www.scopus.com/inward/record.url?scp=85131578080&partnerID=8YFLogxK
U2 - 10.1002/aenm.202200821
DO - 10.1002/aenm.202200821
M3 - Article
AN - SCOPUS:85131578080
SN - 1614-6832
VL - 12
JO - Advanced Energy Materials
JF - Advanced Energy Materials
IS - 27
M1 - 2200821
ER -
Wu Y, Zheng P, Peng J, Xu M, Chen Y, Surve S et al. 27.6% Perovskite/c-Si Tandem Solar Cells Using Industrial Fabricated TOPCon Device. Advanced Energy Materials. 2022 Jul 21;12(27):2200821. doi: 10.1002/aenm.202200821
