摘要
Materials normally exhibit positive thermal expansion, and materials with negative thermal expansion coefficient are of great interest for both fundamental study and applications such as high-precision microscale actuators, thermal expansion compensators, etc. Here, the coefficients of linear thermal expansion (αL) along the c axis of the layered ferroelectric CuInP2S6 have been measured. In the single-crystalline bulk specimen, αL exhibits large negative thermal expansion up to -20.05×10-6K-1 in the temperature range below 150 K. In contrast to the bulk, exfoliated ultrathin CuInP2S6 flakes exhibit an overall positive αL∼26.8×10-6K-1. The thickness-dependent thermal expansion of CuInP2S6 crystal may facilitate the design of van der Waals heterostructures and ferroelectric devices with tunable thermal responses.
源语言 | 英语 |
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文章编号 | 045406 |
期刊 | Physical Review B |
卷 | 107 |
期 | 4 |
DOI | |
出版状态 | 已出版 - 15 1月 2023 |