Ultraviolet irradiation-controlled memory effect in graphene field-effect transistors

Jie Meng; Han Chun Wu; Jing Jing Chen; Fang Lin; Ya Qing Bie; Igor V. Shvets; Da Peng Yu; Zhi Min Liao

doi:10.1002/smll.201202947

Ultraviolet irradiation-controlled memory effect in graphene field-effect transistors

Jie Meng, Han Chun Wu, Jing Jing Chen, Fang Lin, Ya Qing Bie, Igor V. Shvets, Da Peng Yu, Zhi Min Liao^*

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

17 引用（Scopus）

摘要

Control of graphene memory devices using photons, via control of the charge-transfer process, is demonstrated by employing gate-voltage pulses to program/erase the memory elements. The hysteresis in the conductance-gate voltage-dependence of graphene field-effect transistors on a SiO₂ substrate can be greatly enlarged by ultraviolet irradiation in both air and vacuum. An enhanced charge transfer between graphene and its surroundings, induced by ultraviolet illumination, is proposed.

源语言	英语
页（从-至）	2240-2244
页数	5
期刊	Small
卷	9
期	13
DOI	https://doi.org/10.1002/smll.201202947
出版状态	已出版 - 8 7月 2013
已对外发布	是

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author = "Jie Meng and Wu, {Han Chun} and Chen, {Jing Jing} and Fang Lin and Bie, {Ya Qing} and Shvets, {Igor V.} and Yu, {Da Peng} and Liao, {Zhi Min}",

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T1 - Ultraviolet irradiation-controlled memory effect in graphene field-effect transistors

AU - Meng, Jie

AU - Wu, Han Chun

AU - Chen, Jing Jing

AU - Lin, Fang

AU - Bie, Ya Qing

AU - Shvets, Igor V.

AU - Yu, Da Peng

AU - Liao, Zhi Min

PY - 2013/7/8

Y1 - 2013/7/8

N2 - Control of graphene memory devices using photons, via control of the charge-transfer process, is demonstrated by employing gate-voltage pulses to program/erase the memory elements. The hysteresis in the conductance-gate voltage-dependence of graphene field-effect transistors on a SiO2 substrate can be greatly enlarged by ultraviolet irradiation in both air and vacuum. An enhanced charge transfer between graphene and its surroundings, induced by ultraviolet illumination, is proposed.

AB - Control of graphene memory devices using photons, via control of the charge-transfer process, is demonstrated by employing gate-voltage pulses to program/erase the memory elements. The hysteresis in the conductance-gate voltage-dependence of graphene field-effect transistors on a SiO2 substrate can be greatly enlarged by ultraviolet irradiation in both air and vacuum. An enhanced charge transfer between graphene and its surroundings, induced by ultraviolet illumination, is proposed.

KW - field-effect transistors

KW - graphene

KW - hysteresis

KW - photoelectrical responses

KW - trap states

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Ultraviolet irradiation-controlled memory effect in graphene field-effect transistors

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