Ultrasensitive and Broadband All-Optically Controlled THz Modulator Based on MoTe2/Si van der Waals Heterostructure

Jie Qiao, Shanpeng Wang*, Ziming Wang, Chuan He, Shuqi Zhao, Xixi Xiong, Shilei Wang, Xixia Zhang, Xutang Tao*

*此作品的通讯作者

科研成果: 期刊稿件文章同行评审

41 引用 (Scopus)

摘要

Despite the impressive progresses in terahertz (THz) sources and detection, there is still a big challenge for high performance active optoelectronic THz devices such as THz modulators. All-optically controlled THz modulators with large modulation depth (MD) and wide modulation bandwidth are of great importance for the THz technology. Herein, a MoTe2/Si van der Waals (vdWs) heterostructure is rationally designed as all-optical THz modulator by taking advantage of their similar band alignment and easy integration with Si complementary metal-oxide-semiconductor (CMOS). The MoTe2/Si modulator presents an ultrasensitive THz modulation performance with a MD of 99.9% under a low illumination power of 300 mW at 1064 nm. This is a record MD for TMDCs-based all-optically controlled THz modulators to date. Moreover, the MoTe2/Si modulator exhibits broadband modulation performance with a wide frequency range from 0.3 to 2.0 THz. The high modulation performance under low illumination power is beneficial for practical application with low energy consumption and easy heat dissipation, which is advantageous to modulator chip. This work validates a facile protocol for fabricating high performance THz modulators and paves the way for their practical applications in THz technology.

源语言英语
文章编号2000160
期刊Advanced Optical Materials
8
17
DOI
出版状态已出版 - 1 9月 2020

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