@article{fa7531a010644945bf6b17e78fdf6265,
title = "Tunable electroluminescence in planar graphene/sio2 memristors",
abstract = "Electroluminescence and resistive switching are first realized simultaneously in graphene/SiO2 memristor devices. The electroluminescence peaks can be tuned between 550 nm and 770 nm reliably via setting the device to different resistance states by applying different voltages. The combination of resistive switching and electroluminescence may bring new functionalities for these memristor devices which are fully compatible with silicon-based electronics.",
keywords = "Si nanocrystals, electroluminescence, graphene/SiO nanogap devices, memristor",
author = "Congli He and Jiafang Li and Xing Wu and Peng Chen and Jing Zhao and Kuibo Yin and Meng Cheng and Wei Yang and Guibai Xie and Duoming Wang and Donghua Liu and Rong Yang and Dongxia Shi and Zhiyuan Li and Litao Sun and Guangyu Zhang",
year = "2013",
month = oct,
day = "18",
doi = "10.1002/adma.201302447",
language = "English",
volume = "25",
pages = "5593--5598",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-Blackwell",
number = "39",
}