Threshold displacement energies and displacement cascades in 4H-SiC: Molecular dynamic simulations

Chemistry

• Molecular Dynamics 100%
• Number 100%
• Interfacial Energy 100%
• Crystal Structure 50%
• Calorific Value 50%
• Kinetic Energy 50%
• Crystal Point Defect 50%

Engineering

• Energy Engineering 100%
• Computer Simulation 100%
• Defects 33%
• Energy Surface 33%
• Crystal Structure 16%
• Great Number 16%
• Anisotropic 16%
• Calorific Value 16%

Material Science

• Surface Energy 100%
• Crystal Structure 50%
• Point Defect 50%