The superconductivity in boron-doped polycrystalline diamond thick films

Z. L. Wang; Q. Luo; L. W. Liu; C. Y. Li; H. X. Yang; H. F. Yang; J. J. Li; X. Y. Lu; Z. S. Jin; L. Lu; C. Z. Gu

doi:10.1016/j.diamond.2005.12.035

The superconductivity in boron-doped polycrystalline diamond thick films

Z. L. Wang, Q. Luo, L. W. Liu, C. Y. Li, H. X. Yang, H. F. Yang, J. J. Li, X. Y. Lu, Z. S. Jin, L. Lu, C. Z. Gu^*

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

34 引用（Scopus）

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Boron-doped polycrystalline diamond thick film was prepared by a hot filament chemical vapor deposition (HFCVD) method. The morphology and structure of the diamond were evaluated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and micro-Raman spectroscopy. The carrier concentration of the boron-doped diamond was 7.3 × 10²⁰ cm^-3, determined by a Hall measurement system. The transport measurements show that the boron-doped diamond thick film is superconductive and the superconducting transition temperatures are 10 K for T_c onset and 8.3 K for zero resistance, and there is a strong diamagnetic response in the alternating current (AC) magnetic susceptibility of the boron-doped diamond sample below 8.9 K. Such a high T_c value can be attributed to the higher efficiency of doping, contraction of the reconstructed bonds and two-dimensional nature of the surface states for diamond thick films, all together inducing a stronger electron-phonon coupling.

源语言	英语
页（从-至）	659-663
页数	5
期刊	Diamond and Related Materials
卷	15
期	4-8
DOI	https://doi.org/10.1016/j.diamond.2005.12.035
出版状态	已出版 - 4月 2006
已对外发布	是

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title = "The superconductivity in boron-doped polycrystalline diamond thick films",

abstract = "Boron-doped polycrystalline diamond thick film was prepared by a hot filament chemical vapor deposition (HFCVD) method. The morphology and structure of the diamond were evaluated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and micro-Raman spectroscopy. The carrier concentration of the boron-doped diamond was 7.3 × 1020 cm-3, determined by a Hall measurement system. The transport measurements show that the boron-doped diamond thick film is superconductive and the superconducting transition temperatures are 10 K for Tc onset and 8.3 K for zero resistance, and there is a strong diamagnetic response in the alternating current (AC) magnetic susceptibility of the boron-doped diamond sample below 8.9 K. Such a high Tc value can be attributed to the higher efficiency of doping, contraction of the reconstructed bonds and two-dimensional nature of the surface states for diamond thick films, all together inducing a stronger electron-phonon coupling.",

keywords = "Chemical vapor deposition, Diamond film, Superconductivity, p-type doping",

author = "Wang, {Z. L.} and Q. Luo and Liu, {L. W.} and Li, {C. Y.} and Yang, {H. X.} and Yang, {H. F.} and Li, {J. J.} and Lu, {X. Y.} and Jin, {Z. S.} and L. Lu and Gu, {C. Z.}",

year = "2006",

month = apr,

doi = "10.1016/j.diamond.2005.12.035",

language = "English",

volume = "15",

pages = "659--663",

journal = "Diamond and Related Materials",

issn = "0925-9635",

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TY - JOUR

T1 - The superconductivity in boron-doped polycrystalline diamond thick films

AU - Wang, Z. L.

AU - Luo, Q.

AU - Liu, L. W.

AU - Li, C. Y.

AU - Yang, H. X.

AU - Yang, H. F.

AU - Li, J. J.

AU - Lu, X. Y.

AU - Jin, Z. S.

AU - Lu, L.

AU - Gu, C. Z.

PY - 2006/4

Y1 - 2006/4

N2 - Boron-doped polycrystalline diamond thick film was prepared by a hot filament chemical vapor deposition (HFCVD) method. The morphology and structure of the diamond were evaluated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and micro-Raman spectroscopy. The carrier concentration of the boron-doped diamond was 7.3 × 1020 cm-3, determined by a Hall measurement system. The transport measurements show that the boron-doped diamond thick film is superconductive and the superconducting transition temperatures are 10 K for Tc onset and 8.3 K for zero resistance, and there is a strong diamagnetic response in the alternating current (AC) magnetic susceptibility of the boron-doped diamond sample below 8.9 K. Such a high Tc value can be attributed to the higher efficiency of doping, contraction of the reconstructed bonds and two-dimensional nature of the surface states for diamond thick films, all together inducing a stronger electron-phonon coupling.

AB - Boron-doped polycrystalline diamond thick film was prepared by a hot filament chemical vapor deposition (HFCVD) method. The morphology and structure of the diamond were evaluated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and micro-Raman spectroscopy. The carrier concentration of the boron-doped diamond was 7.3 × 1020 cm-3, determined by a Hall measurement system. The transport measurements show that the boron-doped diamond thick film is superconductive and the superconducting transition temperatures are 10 K for Tc onset and 8.3 K for zero resistance, and there is a strong diamagnetic response in the alternating current (AC) magnetic susceptibility of the boron-doped diamond sample below 8.9 K. Such a high Tc value can be attributed to the higher efficiency of doping, contraction of the reconstructed bonds and two-dimensional nature of the surface states for diamond thick films, all together inducing a stronger electron-phonon coupling.

KW - Chemical vapor deposition

KW - Diamond film

KW - Superconductivity

KW - p-type doping

UR - http://www.scopus.com/inward/record.url?scp=33745234037&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2005.12.035

DO - 10.1016/j.diamond.2005.12.035

M3 - Article

AN - SCOPUS:33745234037

SN - 0925-9635

VL - 15

SP - 659

EP - 663

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 4-8

ER -

The superconductivity in boron-doped polycrystalline diamond thick films

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