The improved properties of solution-based InGaSnO (IGTO) thin film transistor using the modification of InZnO (IZO) layer

Shuo Zhang, Le Weng, Bin Liu, Dan Kuang, Xianwen Liu, Baiqi Jiang, Guangchen Zhang, Zongchi Bao, Guangcai Yuan, Jian Guo, Ce Ning, Dawei Shi, Zhinong Yu^*

^*此作品的通讯作者