TEM and XPS studies on CdS/CIGS interfaces

Jun Feng Han*, Cheng Liao, Li Mei Cha, Tao Jiang, Hua Mu Xie, Kui Zhao, Marie Paule Besland

*此作品的通讯作者

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摘要

Copper indium gallium selenide (CIGS) was deposited by metallic precursors sputtering and subsequently submitted to a selenization process. The upper CdS layers were deposited by chemical bath deposition (CBD) technique. The CdS/CIGS interfaces were investigated by Transmission Electron Microscopy (TEM) and X-ray Photoelectron Spectroscopy (XPS). As checked by XPS analysis, the CIGS surface exhibited a hydroxide-terminated CdSe layer when treated with Cd Partial Electrolyte solution (Cd PE). Its thickness was roughly estimated to several nanometers. A 100 nm thick CdS layer was deposited onto CIGS surface. The TEM images revealed a clear and sharp interface between CdS and CIGS. XPS analysis showed a CIGS surface covered by a pinhole free and homogeneous CdS layer. XPS depth profile measurement of the CdS/CIGS interface did not evidence elemental inter-diffusion between the CIGS and CdS layers, in very good agreement with TEM observations.

源语言英语
页(从-至)1279-1283
页数5
期刊Journal of Physics and Chemistry of Solids
75
12
DOI
出版状态已出版 - 12月 2014

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Han, J. F., Liao, C., Cha, L. M., Jiang, T., Xie, H. M., Zhao, K., & Besland, M. P. (2014). TEM and XPS studies on CdS/CIGS interfaces. Journal of Physics and Chemistry of Solids, 75(12), 1279-1283. https://doi.org/10.1016/j.jpcs.2014.06.002