摘要
The surface mount microwave package based on AlN multilayer substrate has been fabricated by using vertical transition for signal from bottom to top surface. This transition shows that the return loss is less than -15 dB and the insertion loss is less than 1.0 dB. A packaged 6~18 GHz amplifier demonstrates the package dimension of 5 mm×5 mm×1.2 mm, less than -10 dB return loss in band, 15 dB gain and 1 dB gain flatness. Another C-band 5 W power amplifier by this packaging technique has the dimension of 8 mm×8 mm×1.2 mm, and demonstrates less than -10 dB return loss and 25 dB gain in band, 37 dBm saturation output power and 35% power-added-efficiency. The performance of the packaged amplifier can meet the requirements of microwave communication and radar. It is suitable for mass production because the device can be mounted by reflow.
源语言 | 英语 |
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页(从-至) | 584-589 |
页数 | 6 |
期刊 | Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics |
卷 | 32 |
期 | 6 |
出版状态 | 已出版 - 12月 2012 |
已对外发布 | 是 |