摘要
Monolithic integration of DC-DC converters with onchip inductors has emerged as a viable means to reduce size and increase transient performance for portable electronics applications. High-power-density inductors have been recognized as a barrier for such integration. In this paper, a CMOS-compatible process that is capable of fabricating on-chip inductors with low DC resistance and high power density is developed. A unique silicon molding technique is used to obtain thick electroplating layers for cores and windings. SU-8 is used as the isolation material between windings and cores. A pot-core inductor with a low-frequency inductance of 134 nH and a dc resistance of 9.1 mΩ has been demonstrated.
| 源语言 | 英语 |
|---|---|
| 主期刊名 | Proceedings - 34th Annual Conference of the IEEE Industrial Electronics Society, IECON 2008 |
| 出版商 | IEEE Computer Society |
| 页 | 2672-2676 |
| 页数 | 5 |
| ISBN（印刷版） | 9781424417667 |
| DOI | |
| 出版状态 | 已出版 - 2008 |
| 已对外发布 | 是 |
出版系列
| 姓名 | IECON Proceedings (Industrial Electronics Conference) |
|---|
指纹
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Wang, M., Ngo, K. D. T., & Xie, H. (2008). SU-8 enhanced high power density MEMS inductors. 在 Proceedings - 34th Annual Conference of the IEEE Industrial Electronics Society, IECON 2008 (页码 2672-2676). 文章 4758379 (IECON Proceedings (Industrial Electronics Conference)). IEEE Computer Society. https://doi.org/10.1109/IECON.2008.4758379