Study on the statistical distribution of passing depth by low-energy ion implanted in plant seeds

When the low-energy ions walking through in the plant seeds, its collision with the organic target of the plant seeds is a stochastic process. Therefore, based on the stochastic theory, the Fock-Plank equation which is equivalent to the generalized Langevin equation is solved. Combining the two-body model of the collision between the low- energy ion and the target atom in the plant seeds, the average passing depth of the implanted ions and the passing depth probability density are calculated. According to the above model, when not considering the existence of voids in the plant seeds, the probability density distribution of different ions implanted seeds was compared. It was found that different incident ions collision with the same target atoms inside the plant seeds, the average passing depth are different. And when different energy of implanted ions colliding with the same target atoms, the average passing depth is also different. When considering the existence of voids inside the seeds, the effect of the existence of voids size on the passing depth of the implanted ions is also compared. Finally, the effects of the voids on the passing depth of the implanted ions are compared and found that the voids affected the passing depth of the implanted ions. This model provides a computational model for the passing depth distribution of low-energy ion implantation in plant seeds. This method may be helpful for studying ions breeding and genetic engineering.