Study on surge current characteristic of SiC SBD with different solder layer structure

Zheng Hu, Yinjie Wang, Xiuchen Zhao, Yongjun Huo, Yidan Tang*

*此作品的通讯作者

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

In this paper, surge current characteristic of SiC SBD with different solder layer structure and the dynamic trend of junction temperature during surge current were studied by FloTHERM. It was found that different surge current and highest junction temperature difference affect surge characteristic of SiC SBD device with different solder materials and thicknesses. The SiC SBD device packaged by nanosilver has the lowest junction temperature under the same surge current due to the better heat difussion path and lager heat flux than the others. The maximum junction temperature of SiC SBD device decrease firstly and then increase with increasing solder layer thickness from 20μm to 120μm, which may be caused by volume strain energy. Meanwhile, it was seen that the highest junction temperature exhibits 1ms delay compared to the peak surge current of 5ms because the heat generated at 5ms is more than the heat flux. Based on the variation of highest junction temperature difference, the junction temperature change is related to device working state that includes unipolar conduction and bipolar conduction. It provides simulation theoretical guidance for the effect of different solder materials and thicknesses on SiC SBD devices under surge current in the future.

源语言英语
主期刊名2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023
出版商Institute of Electrical and Electronics Engineers Inc.
ISBN(电子版)9798350338812
DOI
出版状态已出版 - 2023
活动24th International Conference on Electronic Packaging Technology, ICEPT 2023 - Shihezi City, 中国
期限: 8 8月 202311 8月 2023

出版系列

姓名2023 24th International Conference on Electronic Packaging Technology, ICEPT 2023

会议

会议24th International Conference on Electronic Packaging Technology, ICEPT 2023
国家/地区中国
Shihezi City
时期8/08/2311/08/23

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