摘要
In this paper, a novel micro high g acceleration sensor based on piezoresistor effect is designed and fabricated to be a four-beam-mass structure, and a piezoresistor-Wheatstone bridge measurement circuit is established to obtain the signal of impulse load. A measurement system based on Hopkinson is established to test the basic characteristic of this micro high g acceleration sensor. According to the experimental results, the sensitivity of the high g acceleration sensor is 0.71uV/g at the impact load of 100,000.8g.
| 源语言 | 英语 |
|---|---|
| 主期刊名 | Mechatronics and Intelligent Materials II |
| 页 | 499-503 |
| 页数 | 5 |
| DOI | |
| 出版状态 | 已出版 - 2012 |
| 活动 | 2nd International Conference on Mechatronics and Intelligent Materials 2012, MIM 2012 - GuiLin, 中国 期限: 18 5月 2012 → 19 5月 2012 |
出版系列
| 姓名 | Advanced Materials Research |
|---|---|
| 卷 | 490-495 |
| ISSN（印刷版） | 1022-6680 |
会议
| 会议 | 2nd International Conference on Mechatronics and Intelligent Materials 2012, MIM 2012 |
|---|---|
| 国家/地区 | 中国 |
| 市 | GuiLin |
| 时期 | 18/05/12 → 19/05/12 |
指纹
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Li, P., Shi, Y. B., Liu, J., & Gao, S. Q. (2012). Study on a novel MEMS high g acceleration sensor. 在 Mechatronics and Intelligent Materials II (页码 499-503). (Advanced Materials Research; 卷 490-495). https://doi.org/10.4028/www.scientific.net/AMR.490-495.499