摘要
On wafer 0.16 μm NMOS transistors are stressed and measured. Soft breakdown effects on MOS switch and passive mixer are evaluated. Time constant for the switch increases. Conversion gain and LO feed-through of the mixer degraded.
源语言 | 英语 |
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文章编号 | 1315435 |
页(从-至) | 653-654 |
页数 | 2 |
期刊 | IEEE International Reliability Physics Symposium Proceedings |
卷 | 2004-January |
期 | January |
DOI | |
出版状态 | 已出版 - 2004 |
已对外发布 | 是 |
活动 | 42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004 - Phoenix, 美国 期限: 25 4月 2004 → 29 4月 2004 |