Soft breakdown effects on MOS switch and passive mixer

Anwar Sadat, Yi Liu, Jiann Yuan, Huikai Xie

科研成果: 期刊稿件会议文章同行评审

摘要

On wafer 0.16 μm NMOS transistors are stressed and measured. Soft breakdown effects on MOS switch and passive mixer are evaluated. Time constant for the switch increases. Conversion gain and LO feed-through of the mixer degraded.

源语言英语
文章编号1315435
页(从-至)653-654
页数2
期刊IEEE International Reliability Physics Symposium Proceedings
2004-January
January
DOI
出版状态已出版 - 2004
已对外发布
活动42nd Annual IEEE International Reliability Physics Symposium, IRPS 2004 - Phoenix, 美国
期限: 25 4月 200429 4月 2004

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