Jiang, M., Li, Y., Li, S., Zhou, H., Cao, X., Bao, S., Gao, Y., Luo, H., & Jin, P. (2014). Room temperature optical constants and band gap evolution of phase pure M1-VO2 thin films deposited at different oxygen partial pressures by reactive magnetron sputtering. Journal of Nanomaterials, 2014, 文章 183954. https://doi.org/10.1155/2014/183954
Jiang, Meng ; Li, Yamei ; Li, Shaotang 等. / Room temperature optical constants and band gap evolution of phase pure M1-VO2 thin films deposited at different oxygen partial pressures by reactive magnetron sputtering. 在: Journal of Nanomaterials. 2014 ; 卷 2014.
@article{9612603592084af6835334ab31cb2b7c,
title = "Room temperature optical constants and band gap evolution of phase pure M1-VO2 thin films deposited at different oxygen partial pressures by reactive magnetron sputtering",
abstract = "Spectroscopic ellipsometry study was employed for phase pure VO 2(M1) thin films grown at different oxygen partial pressures by reactive magnetron sputtering. The optical constants of the VO 2(M1) thin films have been determined in a photon energy range between 0.73 and 5.05 eV. The near-infrared extinction coefficient and optical conductivity of VO2(M1) thin films rapidly increase with decreasing O2-Ar ratios. Moreover, two electronic transitions can be uniquely assigned. The energy gaps correlated with absorption edge (E1) at varied O2-Ar ratios are almost the same (2.0 eV); consequently, the absorption edge is not significantly changed. However, the optical band gap corresponding to semiconductor-to-metal phase transition (E 2) decreases from 0.53 to 0.18 eV with decreasing O2-Ar ratios.",
author = "Meng Jiang and Yamei Li and Shaotang Li and Huaijuan Zhou and Xun Cao and Shanhu Bao and Yanfeng Gao and Hongjie Luo and Ping Jin",
year = "2014",
doi = "10.1155/2014/183954",
language = "English",
volume = "2014",
journal = "Journal of Nanomaterials",
issn = "1687-4110",
publisher = "Hindawi Limited",
}
Jiang, M, Li, Y, Li, S, Zhou, H, Cao, X, Bao, S, Gao, Y, Luo, H & Jin, P 2014, 'Room temperature optical constants and band gap evolution of phase pure M1-VO2 thin films deposited at different oxygen partial pressures by reactive magnetron sputtering', Journal of Nanomaterials, 卷 2014, 183954. https://doi.org/10.1155/2014/183954
Room temperature optical constants and band gap evolution of phase pure M1-VO2 thin films deposited at different oxygen partial pressures by reactive magnetron sputtering. / Jiang, Meng; Li, Yamei; Li, Shaotang 等.
在:
Journal of Nanomaterials, 卷 2014, 183954, 2014.
科研成果: 期刊稿件 › 文章 › 同行评审
TY - JOUR
T1 - Room temperature optical constants and band gap evolution of phase pure M1-VO2 thin films deposited at different oxygen partial pressures by reactive magnetron sputtering
AU - Jiang, Meng
AU - Li, Yamei
AU - Li, Shaotang
AU - Zhou, Huaijuan
AU - Cao, Xun
AU - Bao, Shanhu
AU - Gao, Yanfeng
AU - Luo, Hongjie
AU - Jin, Ping
PY - 2014
Y1 - 2014
N2 - Spectroscopic ellipsometry study was employed for phase pure VO 2(M1) thin films grown at different oxygen partial pressures by reactive magnetron sputtering. The optical constants of the VO 2(M1) thin films have been determined in a photon energy range between 0.73 and 5.05 eV. The near-infrared extinction coefficient and optical conductivity of VO2(M1) thin films rapidly increase with decreasing O2-Ar ratios. Moreover, two electronic transitions can be uniquely assigned. The energy gaps correlated with absorption edge (E1) at varied O2-Ar ratios are almost the same (2.0 eV); consequently, the absorption edge is not significantly changed. However, the optical band gap corresponding to semiconductor-to-metal phase transition (E 2) decreases from 0.53 to 0.18 eV with decreasing O2-Ar ratios.
AB - Spectroscopic ellipsometry study was employed for phase pure VO 2(M1) thin films grown at different oxygen partial pressures by reactive magnetron sputtering. The optical constants of the VO 2(M1) thin films have been determined in a photon energy range between 0.73 and 5.05 eV. The near-infrared extinction coefficient and optical conductivity of VO2(M1) thin films rapidly increase with decreasing O2-Ar ratios. Moreover, two electronic transitions can be uniquely assigned. The energy gaps correlated with absorption edge (E1) at varied O2-Ar ratios are almost the same (2.0 eV); consequently, the absorption edge is not significantly changed. However, the optical band gap corresponding to semiconductor-to-metal phase transition (E 2) decreases from 0.53 to 0.18 eV with decreasing O2-Ar ratios.
UR - http://www.scopus.com/inward/record.url?scp=84893177385&partnerID=8YFLogxK
U2 - 10.1155/2014/183954
DO - 10.1155/2014/183954
M3 - Article
AN - SCOPUS:84893177385
SN - 1687-4110
VL - 2014
JO - Journal of Nanomaterials
JF - Journal of Nanomaterials
M1 - 183954
ER -
Jiang M, Li Y, Li S, Zhou H, Cao X, Bao S 等. Room temperature optical constants and band gap evolution of phase pure M1-VO2 thin films deposited at different oxygen partial pressures by reactive magnetron sputtering. Journal of Nanomaterials. 2014;2014:183954. doi: 10.1155/2014/183954