Room temperature optical constants and band gap evolution of phase pure M1-VO2 thin films deposited at different oxygen partial pressures by reactive magnetron sputtering

Meng Jiang, Yamei Li, Shaotang Li, Huaijuan Zhou, Xun Cao, Shanhu Bao, Yanfeng Gao, Hongjie Luo, Ping Jin*

*此作品的通讯作者

科研成果: 期刊稿件文章同行评审

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摘要

Spectroscopic ellipsometry study was employed for phase pure VO 2(M1) thin films grown at different oxygen partial pressures by reactive magnetron sputtering. The optical constants of the VO 2(M1) thin films have been determined in a photon energy range between 0.73 and 5.05 eV. The near-infrared extinction coefficient and optical conductivity of VO2(M1) thin films rapidly increase with decreasing O2-Ar ratios. Moreover, two electronic transitions can be uniquely assigned. The energy gaps correlated with absorption edge (E1) at varied O2-Ar ratios are almost the same (2.0 eV); consequently, the absorption edge is not significantly changed. However, the optical band gap corresponding to semiconductor-to-metal phase transition (E 2) decreases from 0.53 to 0.18 eV with decreasing O2-Ar ratios.

源语言英语
文章编号183954
期刊Journal of Nanomaterials
2014
DOI
出版状态已出版 - 2014
已对外发布

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Jiang, M., Li, Y., Li, S., Zhou, H., Cao, X., Bao, S., Gao, Y., Luo, H., & Jin, P. (2014). Room temperature optical constants and band gap evolution of phase pure M1-VO2 thin films deposited at different oxygen partial pressures by reactive magnetron sputtering. Journal of Nanomaterials, 2014, 文章 183954. https://doi.org/10.1155/2014/183954