摘要
The PZT piezoelectric thin film was deposited on silicon substrates by using sol-gel techniques. The PZT thin films was used to fabricate V type valve microactuator by its piezoelectric response. As the key structure of microactuator, the preparation of multi-layer driving membrane structure for the Si/SiO2/Ti/Pt/PZT/Cr/Au solved the questions of problem of PZT deposited on silicon substrate. The problems of fabrication for the pump cavity and one-way valve fabricated by anisotropic etching are investigated and solved. The SEM photographs of V type valve and XRD analysis for the multi-layer driving membrane are given. The results show that the method integrating MEMS and IC technology to fabricating the microactuator is successfully. The pump cavity is flat and uniform. In the design of V type valve, the number of silicon slice is less and so the complexity is reduced to satisfying the desires of low power, minimizing and large number production.
源语言 | 英语 |
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页(从-至) | 24-27 |
页数 | 4 |
期刊 | Cailiao Gongcheng/Journal of Materials Engineering |
期 | 8 |
出版状态 | 已出版 - 8月 2007 |