@inproceedings{e8478c5d51044ae4bd9a1ed749320676,
title = "Research and application of Ku-band 200W AlGaN/GaN power HEMT with four cells internal matching",
abstract = "In this paper, We research the AlGaN/GaN internal matching technology. Using in-house made four 20mm GaN Power HEMT transistors, the internal matching power HEMT demonstrates a pulse over 180W across the band of 13.7-14.5GHz, an output power more than 200W with a power gain of over 6dB, the power added efficiency (PAE) of 30.47% at 14 GHz, operated at 32V drain bias voltage (Vds) with the pulsed conditions at a duty of 10% with a pulse width of 100us. The package size excluding flange and leads is 17.4mm × 24mm. This is the highest output power in a 100W-class AlGaN/GaN HEMT in that such package at Ku-band to the best of our knowledge.",
keywords = "GaN, HEMT, PAE, internal matching",
author = "Shichang Zhong and Tangsheng Chen and Chunjiang Ren and Feng Qian and Chen Chen and Tao Gao",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 4th IEEE Asia-Pacific Conference on Antennas and Propagation, APCAP 2015 ; Conference date: 30-06-2015 Through 03-07-2015",
year = "2016",
month = jan,
day = "6",
doi = "10.1109/APCAP.2015.7374467",
language = "English",
series = "Proceedings of the 2015 IEEE 4th Asia-Pacific Conference on Antennas and Propagation, APCAP 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "510--511",
booktitle = "Proceedings of the 2015 IEEE 4th Asia-Pacific Conference on Antennas and Propagation, APCAP 2015",
address = "United States",
}