Reduction of internal stress in InGaZnO (IGZO) thin film transistors by ultra-thin metal oxide layer

Shuo Zhang, Bin Liu, Xi Zhang, Congyang Wen, Haoran Sun, Xianwen Liu, Qi Yao, Xiaorui Zi, Zongchi Bao, Zijin Xiao, Yunsong Zhang, Guangcai Yuan, Jian Guo, Ce Ning, Dawei Shi, Feng Wang, Zhinong Yu*

*此作品的通讯作者

科研成果: 期刊稿件文章同行评审

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Material Science