TY - JOUR
T1 - Promising ferroelectricity in 2D group IV tellurides
T2 - A first-principles study
AU - Wan, Wenhui
AU - Liu, Chang
AU - Xiao, Wende
AU - Yao, Yugui
N1 - Publisher Copyright:
© 2017 Author(s).
PY - 2017/9/25
Y1 - 2017/9/25
N2 - Based on the first-principles calculations, we investigated the ferroelectric properties of two-dimensional (2D) Group-IV tellurides XTe (X = Si, Ge, and Sn), with a focus on GeTe. 2D Group-IV tellurides energetically prefer an orthorhombic phase with a hinge-like structure and an in-plane spontaneous polarization. The intrinsic Curie temperature Tc of monolayer GeTe is as high as 570 K and can be raised quickly by applying a tensile strain. An out-of-plane electric field can effectively decrease the coercive field for the reversal of polarization, extending its potential for regulating the polarization switching kinetics. Moreover, for bilayer GeTe, the ferroelectric phase is still the ground state. Combined with these advantages, 2D GeTe is a promising candidate material for practical integrated ferroelectric applications.
AB - Based on the first-principles calculations, we investigated the ferroelectric properties of two-dimensional (2D) Group-IV tellurides XTe (X = Si, Ge, and Sn), with a focus on GeTe. 2D Group-IV tellurides energetically prefer an orthorhombic phase with a hinge-like structure and an in-plane spontaneous polarization. The intrinsic Curie temperature Tc of monolayer GeTe is as high as 570 K and can be raised quickly by applying a tensile strain. An out-of-plane electric field can effectively decrease the coercive field for the reversal of polarization, extending its potential for regulating the polarization switching kinetics. Moreover, for bilayer GeTe, the ferroelectric phase is still the ground state. Combined with these advantages, 2D GeTe is a promising candidate material for practical integrated ferroelectric applications.
UR - http://www.scopus.com/inward/record.url?scp=85030211797&partnerID=8YFLogxK
U2 - 10.1063/1.4996171
DO - 10.1063/1.4996171
M3 - Article
AN - SCOPUS:85030211797
SN - 0003-6951
VL - 111
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 13
M1 - 132904
ER -