TY - JOUR
T1 - Photochlorination to prepare semiconducting single-walled carbon nanotube and its intramolecular junction
AU - Wang, Taibin
AU - Wang, Ying
AU - Zhang, Hongjie
AU - Zhang, Xinyu
AU - Zuo, Hui
AU - Qian, Jinjie
AU - Du, Ran
AU - Zhang, Shuchen
AU - Yang, Zhi
AU - Zhao, Qiuchen
AU - Hu, Yue
AU - Huang, Shaoming
N1 - Publisher Copyright:
© 2022 Elsevier Ltd
PY - 2023/1/15
Y1 - 2023/1/15
N2 - As the key to manufacturing large scale integrated circuits, horizontally aligned semiconducting single-walled carbon nanotube (s-SWNT) arrays play a key role in the next-generation electronic device. Though various techniques have been developed, obtaining pure s-SWNT horizontal arrays is still the greatest challenge. Here, we propose an effective and facile method to produce s-SWNT arrays from a diverse perspective by implementing photochemical chlorination on the as-grown aligned SWNT arrays. The electrical measurements demonstrate a high fraction of s-SWNTs (>98.1%) after photochlorination, and its exceptional performance as a field-effect transistor with an on-off ratio up to 3730. Meanwhile, through the well-controlled mask-assisted photochlorination, a type of metallic-semiconducting SWNT intramolecular junction with rectifying diode and non-linear transport characteristics has also been successfully obtain. Our work provides a new method for the preparation of high-purity s-SWNT arrays and SWNT intramolecular junction, which has great significance for the carbon-based nano-electronic devices in applications.
AB - As the key to manufacturing large scale integrated circuits, horizontally aligned semiconducting single-walled carbon nanotube (s-SWNT) arrays play a key role in the next-generation electronic device. Though various techniques have been developed, obtaining pure s-SWNT horizontal arrays is still the greatest challenge. Here, we propose an effective and facile method to produce s-SWNT arrays from a diverse perspective by implementing photochemical chlorination on the as-grown aligned SWNT arrays. The electrical measurements demonstrate a high fraction of s-SWNTs (>98.1%) after photochlorination, and its exceptional performance as a field-effect transistor with an on-off ratio up to 3730. Meanwhile, through the well-controlled mask-assisted photochlorination, a type of metallic-semiconducting SWNT intramolecular junction with rectifying diode and non-linear transport characteristics has also been successfully obtain. Our work provides a new method for the preparation of high-purity s-SWNT arrays and SWNT intramolecular junction, which has great significance for the carbon-based nano-electronic devices in applications.
KW - Field-effect transistors
KW - Intramolecular junction
KW - On-off ratio
KW - Photochemical chlorination
KW - Selective modification
KW - Single-walled carbon nanotubes
UR - http://www.scopus.com/inward/record.url?scp=85142132048&partnerID=8YFLogxK
U2 - 10.1016/j.carbon.2022.11.031
DO - 10.1016/j.carbon.2022.11.031
M3 - Article
AN - SCOPUS:85142132048
SN - 0008-6223
VL - 202
SP - 169
EP - 174
JO - Carbon
JF - Carbon
ER -