Phase-Field Simulation of Strain-Assisted Current-Induced Magnetization Dynamics in a Magnetic Tunnel Junction

Congpeng Zhao; Xingqiao Ma; Houbing Huang; Hasnain Mehdi Jafri; Zhuhong Liu; Long Qing Chen

doi:10.1109/LMAG.2017.2664720

Phase-Field Simulation of Strain-Assisted Current-Induced Magnetization Dynamics in a Magnetic Tunnel Junction

Congpeng Zhao, Xingqiao Ma^*, Houbing Huang, Hasnain Mehdi Jafri, Zhuhong Liu, Long Qing Chen

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摘要

We investigated the effect of substrate misfit strain theoretically by using a phase-field microelasticity model in a simple sandwich structure of a magnetic tunnel junction with perpendicular anisotropy. The critical current for magnetization flipping decreases with increasing tensile strain except in the region above a threshold strain, which results from magneto-elastic coupling interaction between perpendicular magnetic anisotropy and substrate strain. Magnetization reversal speeds with different substrate strains and switching currents are also presented, which suggest ways to improve the magnetization switching efficiency and decrease the power consumption of magnetic devices.

源语言	英语
文章编号	7842593
期刊	IEEE Magnetics Letters
卷	8
DOI	https://doi.org/10.1109/LMAG.2017.2664720
出版状态	已出版 - 2017
已对外发布	是

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title = "Phase-Field Simulation of Strain-Assisted Current-Induced Magnetization Dynamics in a Magnetic Tunnel Junction",

abstract = "We investigated the effect of substrate misfit strain theoretically by using a phase-field microelasticity model in a simple sandwich structure of a magnetic tunnel junction with perpendicular anisotropy. The critical current for magnetization flipping decreases with increasing tensile strain except in the region above a threshold strain, which results from magneto-elastic coupling interaction between perpendicular magnetic anisotropy and substrate strain. Magnetization reversal speeds with different substrate strains and switching currents are also presented, which suggest ways to improve the magnetization switching efficiency and decrease the power consumption of magnetic devices.",

keywords = "Spin electronics, magnetostriction, phase-field simulation, spin torque, strain-Assisted magnetization flipping",

author = "Congpeng Zhao and Xingqiao Ma and Houbing Huang and Jafri, {Hasnain Mehdi} and Zhuhong Liu and Chen, {Long Qing}",

note = "Publisher Copyright: {\textcopyright} 2010-2012 IEEE.",

year = "2017",

doi = "10.1109/LMAG.2017.2664720",

language = "English",

volume = "8",

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T1 - Phase-Field Simulation of Strain-Assisted Current-Induced Magnetization Dynamics in a Magnetic Tunnel Junction

AU - Zhao, Congpeng

AU - Ma, Xingqiao

AU - Huang, Houbing

AU - Jafri, Hasnain Mehdi

AU - Liu, Zhuhong

AU - Chen, Long Qing

PY - 2017

Y1 - 2017

N2 - We investigated the effect of substrate misfit strain theoretically by using a phase-field microelasticity model in a simple sandwich structure of a magnetic tunnel junction with perpendicular anisotropy. The critical current for magnetization flipping decreases with increasing tensile strain except in the region above a threshold strain, which results from magneto-elastic coupling interaction between perpendicular magnetic anisotropy and substrate strain. Magnetization reversal speeds with different substrate strains and switching currents are also presented, which suggest ways to improve the magnetization switching efficiency and decrease the power consumption of magnetic devices.

AB - We investigated the effect of substrate misfit strain theoretically by using a phase-field microelasticity model in a simple sandwich structure of a magnetic tunnel junction with perpendicular anisotropy. The critical current for magnetization flipping decreases with increasing tensile strain except in the region above a threshold strain, which results from magneto-elastic coupling interaction between perpendicular magnetic anisotropy and substrate strain. Magnetization reversal speeds with different substrate strains and switching currents are also presented, which suggest ways to improve the magnetization switching efficiency and decrease the power consumption of magnetic devices.

KW - Spin electronics

KW - magnetostriction

KW - phase-field simulation

KW - spin torque

KW - strain-Assisted magnetization flipping

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U2 - 10.1109/LMAG.2017.2664720

DO - 10.1109/LMAG.2017.2664720

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SN - 1949-307X

VL - 8

JO - IEEE Magnetics Letters

JF - IEEE Magnetics Letters

M1 - 7842593

ER -

Phase-Field Simulation of Strain-Assisted Current-Induced Magnetization Dynamics in a Magnetic Tunnel Junction

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