摘要
A new theoretical model is presented to investigate the amplification of strong ultrashort optical pulses in semiconductor optical amplifiers, while taking free-carrier absorption, stimulated emission, two-photon absorption, spectral hole burning and ultrafast nonlinear refraction into account. Based on this model, the pulsed four-wave mixing model is developed to further simulate the optical sampling based on four-wave mixing theory in semiconductor optical amplifiers. The influences of free-carrier absorption and two-photon absorption on sampling characteristics are emphasized. The simulation results are in agreement with reported experimental results.
源语言 | 英语 |
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页(从-至) | 151-158 |
页数 | 8 |
期刊 | Guangxue Xuebao/Acta Optica Sinica |
卷 | 28 |
期 | 1 |
DOI | |
出版状态 | 已出版 - 1月 2008 |
指纹
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Liu, M., Yang, A., & Sun, Y. (2008). Optical sampling based on four-wave mixing theory in semiconductor optical amplifier. Guangxue Xuebao/Acta Optica Sinica, 28(1), 151-158. https://doi.org/10.3788/AOS20082801.0151