摘要
The advantages of touch mode of operation are near linear output, large over-range pressure and robust structure. And Silicon Carbide (SiC) is a promising material for the device operating in harsh environments. In this paper, a novel touch mode pressure sensor based on SiC is presented, and the process is illustrated detailedly. Based on the calculation and Finite Element Analysis, the structure parameters of the sensor are designed detailedly.
源语言 | 英语 |
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主期刊名 | Proceedings - IEEE 2011 10th International Conference on Electronic Measurement and Instruments, ICEMI 2011 |
页 | 333-335 |
页数 | 3 |
DOI | |
出版状态 | 已出版 - 2011 |
活动 | IEEE 2011 10th International Conference on Electronic Measurement and Instruments, ICEMI 2011 - Chengdu, 中国 期限: 16 8月 2011 → 18 8月 2011 |
出版系列
姓名 | Proceedings - IEEE 2011 10th International Conference on Electronic Measurement and Instruments, ICEMI 2011 |
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卷 | 1 |
会议
会议 | IEEE 2011 10th International Conference on Electronic Measurement and Instruments, ICEMI 2011 |
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国家/地区 | 中国 |
市 | Chengdu |
时期 | 16/08/11 → 18/08/11 |
指纹
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Li, M., Deng, J., & Gao, S. (2011). Novel touch mode capacitive pressure sensor based on SiC. 在 Proceedings - IEEE 2011 10th International Conference on Electronic Measurement and Instruments, ICEMI 2011 (页码 333-335). 文章 6037743 (Proceedings - IEEE 2011 10th International Conference on Electronic Measurement and Instruments, ICEMI 2011; 卷 1). https://doi.org/10.1109/ICEMI.2011.6037743