摘要
We theoretically investigate negative differential resistance (NDR) of massless and massive Dirac Fermions in double barrier resonant tunneling diodes based on sufficiently short and wide graphene strips. The current-voltage characteristics calculated in a rotated pseudospin space show that the NDR feature only presents with appropriate structural parameters for the massless case, and the peak-to-valley current ratio can be enhanced exponentially by a tunable band gap. Remarkably, the lowest NDR operation window is nearly structure-free and can be almost solely controlled by a back gate, which may have potential applications in NDR devices with the operation window as a crucial parameter.
源语言 | 英语 |
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文章编号 | 093118 |
期刊 | Applied Physics Letters |
卷 | 102 |
期 | 9 |
DOI | |
出版状态 | 已出版 - 4 3月 2013 |
已对外发布 | 是 |