Negative differential resistances in graphene double barrier resonant tunneling diodes

Yu Song*, Han Chun Wu, Yong Guo

*此作品的通讯作者

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38 引用 (Scopus)

摘要

We theoretically investigate negative differential resistance (NDR) of massless and massive Dirac Fermions in double barrier resonant tunneling diodes based on sufficiently short and wide graphene strips. The current-voltage characteristics calculated in a rotated pseudospin space show that the NDR feature only presents with appropriate structural parameters for the massless case, and the peak-to-valley current ratio can be enhanced exponentially by a tunable band gap. Remarkably, the lowest NDR operation window is nearly structure-free and can be almost solely controlled by a back gate, which may have potential applications in NDR devices with the operation window as a crucial parameter.

源语言英语
文章编号093118
期刊Applied Physics Letters
102
9
DOI
出版状态已出版 - 4 3月 2013
已对外发布

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