TY - GEN
T1 - Measurements on mechanical properties of boron-doped silicon materials for micro inertia sensor
AU - Haipeng, Liu
AU - Shiqiao, Gao
AU - Shaohua, Niu
AU - Lei, Jin
PY - 2009
Y1 - 2009
N2 - The capacitive structure of comb capacitive micromachined gyroscope is a kind of important structure. The mechanical properties of micro inertia sensor material had changed when the structures experienced high temperature boron diffusion, lithography and etching et.al. micromachined process. Therefore, it is necessary to measure the basic mechanical properties of boron-doped material in order to supply exact material parameters for design and fabrication of micro inertia sensor. With the rapid development of measurement technologies, the nano indentation technology had become an ideal method to obtain the mechanical properties of MEMS structures material accurately. We obtained the elastic modulus and hardness of heavy boron-doped silicon material using nano indenter. The experimental results showed that the elastic modulus and hardness of heavy boron-doped silicon material had increased comparing with the silicon material.
AB - The capacitive structure of comb capacitive micromachined gyroscope is a kind of important structure. The mechanical properties of micro inertia sensor material had changed when the structures experienced high temperature boron diffusion, lithography and etching et.al. micromachined process. Therefore, it is necessary to measure the basic mechanical properties of boron-doped material in order to supply exact material parameters for design and fabrication of micro inertia sensor. With the rapid development of measurement technologies, the nano indentation technology had become an ideal method to obtain the mechanical properties of MEMS structures material accurately. We obtained the elastic modulus and hardness of heavy boron-doped silicon material using nano indenter. The experimental results showed that the elastic modulus and hardness of heavy boron-doped silicon material had increased comparing with the silicon material.
KW - Comb capacitive structure
KW - Elastic modulus
KW - Hardness
KW - Heavy boron-doped silicon
KW - Nano indentation
UR - http://www.scopus.com/inward/record.url?scp=71549168645&partnerID=8YFLogxK
U2 - 10.1109/ICEMI.2009.5274601
DO - 10.1109/ICEMI.2009.5274601
M3 - Conference contribution
AN - SCOPUS:71549168645
SN - 9781424438624
T3 - ICEMI 2009 - Proceedings of 9th International Conference on Electronic Measurement and Instruments
SP - 2174
EP - 2179
BT - ICEMI 2009 - Proceedings of 9th International Conference on Electronic Measurement and Instruments
T2 - 9th International Conference on Electronic Measurement and Instruments, ICEMI 2009
Y2 - 16 August 2009 through 19 August 2009
ER -
