Magnetoresistance in graphene under quantum limit regime

Yang Bo Zhou; Han Chun Wu; Da Peng Yu; Zhi Min Liao

doi:10.1063/1.4795149

Magnetoresistance in graphene under quantum limit regime

Yang Bo Zhou, Han Chun Wu, Da Peng Yu, Zhi Min Liao^*

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

20 引用（Scopus）

摘要

We report the magnetoresistance (MR) in single-layer graphene field-effect transistors at different gate voltages. At low temperatures, the MR exhibits fluctuations at Dirac point, which is attributed to quantum interference effect. Apart from the Dirac point, the MR shows a linear behavior under the extreme quantum limit that is identified by Shubnikov-de Haas oscillations and quantum Hall effect. Our experimental results give a clear manifestation of the quantum linear MR.

源语言	英语
文章编号	093116
期刊	Applied Physics Letters
卷	102
期	9
DOI	https://doi.org/10.1063/1.4795149
出版状态	已出版 - 4 3月 2013
已对外发布	是

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title = "Magnetoresistance in graphene under quantum limit regime",

abstract = "We report the magnetoresistance (MR) in single-layer graphene field-effect transistors at different gate voltages. At low temperatures, the MR exhibits fluctuations at Dirac point, which is attributed to quantum interference effect. Apart from the Dirac point, the MR shows a linear behavior under the extreme quantum limit that is identified by Shubnikov-de Haas oscillations and quantum Hall effect. Our experimental results give a clear manifestation of the quantum linear MR.",

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AB - We report the magnetoresistance (MR) in single-layer graphene field-effect transistors at different gate voltages. At low temperatures, the MR exhibits fluctuations at Dirac point, which is attributed to quantum interference effect. Apart from the Dirac point, the MR shows a linear behavior under the extreme quantum limit that is identified by Shubnikov-de Haas oscillations and quantum Hall effect. Our experimental results give a clear manifestation of the quantum linear MR.

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Magnetoresistance in graphene under quantum limit regime

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