Low-Threshold chip-scale aluminum nitride Raman laser

Xianwen Liu; Changzheng Sun; Bing Xiong; Jian Wang; Lai Wang; Yanjun Han; Zhibiao Hao; Hongtao Li; Yi Luo; Jianchang Yan; Tongbo Wei; Yun Zhang; Junxi Wang

Low-Threshold chip-scale aluminum nitride Raman laser

Xianwen Liu, Changzheng Sun, Bing Xiong, Jian Wang, Lai Wang, Yanjun Han, Zhibiao Hao, Hongtao Li, Yi Luo, Jianchang Yan, Tongbo Wei, Yun Zhang, Junxi Wang

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

1 引用（Scopus）

摘要

Raman lasing is observed in epitaxial aluminum nitride microring with loaded quality factor of ∼1.2×10⁶. The threshold pump power is ∼8.7 mW, with unidirectional slope efficiency of ∼5.1%. Raman frequency shifts of ∼612 and ∼657 cm^-1 are observed for incident light with different polarization.

源语言	英语
主期刊名	2016 International Semiconductor Laser Conference, ISLC 2016
出版商	Institute of Electrical and Electronics Engineers Inc.
ISBN（电子版）	9784885523069
出版状态	已出版 - 2 12月 2016
已对外发布	是
活动	2016 International Semiconductor Laser Conference, ISLC 2016 - Kobe, 日本期限: 12 9月 2016 → 15 9月 2016

出版系列

姓名	Conference Digest - IEEE International Semiconductor Laser Conference
ISSN（印刷版）	0899-9406

会议

会议	2016 International Semiconductor Laser Conference, ISLC 2016
国家/地区	日本
市	Kobe
时期	12/09/16 → 15/09/16

其它文件与链接

链接到 Scopus 的出版物

引用此

Liu, X., Sun, C., Xiong, B., Wang, J., Wang, L., Han, Y., Hao, Z., Li, H., Luo, Y., Yan, J., Wei, T., Zhang, Y., & Wang, J. (2016). Low-Threshold chip-scale aluminum nitride Raman laser. 在 2016 International Semiconductor Laser Conference, ISLC 2016 文章 7765720 (Conference Digest - IEEE International Semiconductor Laser Conference). Institute of Electrical and Electronics Engineers Inc..

@inproceedings{927bdc76caad44e4b3392e6126325c6f,

title = "Low-Threshold chip-scale aluminum nitride Raman laser",

abstract = "Raman lasing is observed in epitaxial aluminum nitride microring with loaded quality factor of ∼1.2×106. The threshold pump power is ∼8.7 mW, with unidirectional slope efficiency of ∼5.1%. Raman frequency shifts of ∼612 and ∼657 cm-1 are observed for incident light with different polarization.",

keywords = "Epitaxial aluminum nitride, High-quality microring, On-chip Raman laser, Stimulated Raman scattering",

author = "Xianwen Liu and Changzheng Sun and Bing Xiong and Jian Wang and Lai Wang and Yanjun Han and Zhibiao Hao and Hongtao Li and Yi Luo and Jianchang Yan and Tongbo Wei and Yun Zhang and Junxi Wang",

note = "Publisher Copyright: {\textcopyright} 2016 IEICE-ES.; 2016 International Semiconductor Laser Conference, ISLC 2016 ; Conference date: 12-09-2016 Through 15-09-2016",

year = "2016",

month = dec,

day = "2",

language = "English",

series = "Conference Digest - IEEE International Semiconductor Laser Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2016 International Semiconductor Laser Conference, ISLC 2016",

address = "United States",

}

Liu, X, Sun, C, Xiong, B, Wang, J, Wang, L, Han, Y, Hao, Z, Li, H, Luo, Y, Yan, J, Wei, T, Zhang, Y & Wang, J 2016, Low-Threshold chip-scale aluminum nitride Raman laser. 在 2016 International Semiconductor Laser Conference, ISLC 2016., 7765720, Conference Digest - IEEE International Semiconductor Laser Conference, Institute of Electrical and Electronics Engineers Inc., 2016 International Semiconductor Laser Conference, ISLC 2016, Kobe, 日本, 12/09/16.

Low-Threshold chip-scale aluminum nitride Raman laser. / Liu, Xianwen; Sun, Changzheng; Xiong, Bing 等.
2016 International Semiconductor Laser Conference, ISLC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7765720 (Conference Digest - IEEE International Semiconductor Laser Conference).

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

TY - GEN

T1 - Low-Threshold chip-scale aluminum nitride Raman laser

AU - Liu, Xianwen

AU - Sun, Changzheng

AU - Xiong, Bing

AU - Wang, Jian

AU - Wang, Lai

AU - Han, Yanjun

AU - Hao, Zhibiao

AU - Li, Hongtao

AU - Luo, Yi

AU - Yan, Jianchang

AU - Wei, Tongbo

AU - Zhang, Yun

AU - Wang, Junxi

PY - 2016/12/2

Y1 - 2016/12/2

N2 - Raman lasing is observed in epitaxial aluminum nitride microring with loaded quality factor of ∼1.2×106. The threshold pump power is ∼8.7 mW, with unidirectional slope efficiency of ∼5.1%. Raman frequency shifts of ∼612 and ∼657 cm-1 are observed for incident light with different polarization.

AB - Raman lasing is observed in epitaxial aluminum nitride microring with loaded quality factor of ∼1.2×106. The threshold pump power is ∼8.7 mW, with unidirectional slope efficiency of ∼5.1%. Raman frequency shifts of ∼612 and ∼657 cm-1 are observed for incident light with different polarization.

KW - Epitaxial aluminum nitride

KW - High-quality microring

KW - On-chip Raman laser

KW - Stimulated Raman scattering

UR - http://www.scopus.com/inward/record.url?scp=85010190705&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:85010190705

T3 - Conference Digest - IEEE International Semiconductor Laser Conference

BT - 2016 International Semiconductor Laser Conference, ISLC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 International Semiconductor Laser Conference, ISLC 2016

Y2 - 12 September 2016 through 15 September 2016

ER -

Low-Threshold chip-scale aluminum nitride Raman laser

摘要

出版系列

会议

其它文件与链接

指纹

引用此