TY - JOUR
T1 - Low-Profile Broadband Absorber Based on Multimode Resistor-Embedded Metallic Strips
AU - Zhang, Binchao
AU - Jin, Cheng
AU - Shen, Zhongxiang
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2020/3
Y1 - 2020/3
N2 - This article proposes a new method to realize a low-profile broadband absorber. The unit cell of the proposed absorber consists of two layers: a lossy layer with four rotationally symmetric bent metallic strips embedded with two chip-resistors, which is modified from a doubly fed dipole antenna, and a metallic ground separated from the lossy layer by an air spacer. Three resonant modes of the metallic strip embedded with two chip-resistors are generated, and the current in the strip passes through the chip-resistors under different modes and it is finally consumed, resulting in energy dissipation. As a result, an ultrawideband absorber is realized. The designed absorber is fabricated and measured, and the measured absorption band with a fractional bandwidth of 127.9% is achieved for at least 10-dB reflectivity reduction under the normal incidence. In addition, the thickness of the designed absorber is only 0.08λL, where λL is the wavelength at the lowest operating frequency.
AB - This article proposes a new method to realize a low-profile broadband absorber. The unit cell of the proposed absorber consists of two layers: a lossy layer with four rotationally symmetric bent metallic strips embedded with two chip-resistors, which is modified from a doubly fed dipole antenna, and a metallic ground separated from the lossy layer by an air spacer. Three resonant modes of the metallic strip embedded with two chip-resistors are generated, and the current in the strip passes through the chip-resistors under different modes and it is finally consumed, resulting in energy dissipation. As a result, an ultrawideband absorber is realized. The designed absorber is fabricated and measured, and the measured absorption band with a fractional bandwidth of 127.9% is achieved for at least 10-dB reflectivity reduction under the normal incidence. In addition, the thickness of the designed absorber is only 0.08λL, where λL is the wavelength at the lowest operating frequency.
KW - Circuit analog (CA) absorber
KW - frequency-selective surface (FSS)
KW - multimode metallic strips
KW - planar absorber
UR - http://www.scopus.com/inward/record.url?scp=85077273255&partnerID=8YFLogxK
U2 - 10.1109/TMTT.2019.2956933
DO - 10.1109/TMTT.2019.2956933
M3 - Article
AN - SCOPUS:85077273255
SN - 0018-9480
VL - 68
SP - 835
EP - 843
JO - IEEE Transactions on Microwave Theory and Techniques
JF - IEEE Transactions on Microwave Theory and Techniques
IS - 3
M1 - 8941301
ER -