Local Gate Enhanced Correlated Phases in Twisted Monolayer-Bilayer Graphene

Yingbo Wang, Zhengwen Wang, Lu Cao, Yingzhuo Han, Huimin Peng, Zhongrui Wang, Yucheng Xue, Kenji Watanabe, Takashi Taniguchi, Jianming Lu, Junxi Duan*, Hong Jun Gao, Yuhang Jiang*, Jinhai Mao*

*此作品的通讯作者

科研成果: 期刊稿件文章同行评审

摘要

Manipulating the flat band degeneracy and thus getting the correlated insulating phases has been an ideal thread for realizing the exotic quantum phenomenon in the moiré system. To achieve this goal, the delicately tuned twist angle and a substantial displacement field (D) are rigorously requested. Here, we report our scanning tunneling microscope (STM) work on reaching these correlated insulating states in twisted monolayer-bilayer graphene through a decorated tip. It acts as a local top gate, leading to an enhanced local D, and enables us to fully lift the 8-fold degeneracy of the flat bands. With the aid of this technique, we further expand the correlated insulating states into a more tolerant twist angle that is down to 0.92°. Moreover, the correlated insulating phases in the hole-doping regime are realized. Our tip decoration method allows us to integrate the STM study with the high displacement field for the correlated phases in the twisted moiré systems.

源语言英语
页(从-至)17707-17714
页数8
期刊ACS Nano
18
27
DOI
出版状态已出版 - 9 7月 2024

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