Lateral capacitive CMOS accelerometer with structural curl compensation

Gang Zhang*, Huikai Xie, Lauren E. de Rosset, Gary K. Fedder

*此作品的通讯作者

科研成果: 会议稿件论文同行评审

50 引用 (Scopus)

摘要

We present successful experimental results from the first lateral capacitive accelerometer to be designed and manufactured in a conventional CMOS process. Compatibility with conventional CMOS provides advantages of low cost, high yield and fast prototyping that should be transferable to any CMOS foundry. A fully differential capacitive-bridge interface which can not be realized in polysilicon technology is designed and implemented. Out-of-plane curling associated with the composite structural layers is compensated to first order through a curl matching technique. The prototype accelerometer has a measured sensitivity of 1.2 mV/g and a 0.5 mg/rtHz noise floor at the output of the sensing element.

源语言英语
606-611
页数6
出版状态已出版 - 1999
已对外发布
活动Proceedings of the 1999 12th IEEE International Conference on Micro Electro Mechanical Systems, MEMS - Orlando, FL, USA
期限: 17 1月 199921 1月 1999

会议

会议Proceedings of the 1999 12th IEEE International Conference on Micro Electro Mechanical Systems, MEMS
Orlando, FL, USA
时期17/01/9921/01/99

指纹

探究 'Lateral capacitive CMOS accelerometer with structural curl compensation' 的科研主题。它们共同构成独一无二的指纹。

引用此