Ku-band 60 W AlGaN/GaN internally matched power HEMT

Shichang Zhong; Tangsheng Chen; Feng Qian; Chen Chen; Tao Gao

Ku-band 60 W AlGaN/GaN internally matched power HEMT

Shichang Zhong^*, Tangsheng Chen, Feng Qian, Chen Chen, Tao Gao

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

The paper researches the Ku- band 60 W AlGaN/GaN internal matching technology. Using two 10.8 mm GaN power HEMT transistors made by Nanjing Electric Devices Institute, the internally matched transistor demonstrates an pulse output power of more than 60 W with a power gain of over 6 dB across the band of 14.0~14.5 GHz, at operating drain bias voltage of 28 V. And the maximum pulse output power of 66 W with PAE of 33.1% under V_ds of 28 V at 14.0 GHz is tested. It fully shows the advantages of the GaN power device.

源语言	英语
页（从-至）	350-353
页数	4
期刊	Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
卷	34
期	4
出版状态	已出版 - 1 8月 2014
已对外发布	是

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Zhong, S., Chen, T., Qian, F., Chen, C., & Gao, T. (2014). Ku-band 60 W AlGaN/GaN internally matched power HEMT. Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics, 34(4), 350-353.

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title = "Ku-band 60 W AlGaN/GaN internally matched power HEMT",

abstract = "The paper researches the Ku- band 60 W AlGaN/GaN internal matching technology. Using two 10.8 mm GaN power HEMT transistors made by Nanjing Electric Devices Institute, the internally matched transistor demonstrates an pulse output power of more than 60 W with a power gain of over 6 dB across the band of 14.0~14.5 GHz, at operating drain bias voltage of 28 V. And the maximum pulse output power of 66 W with PAE of 33.1% under Vds of 28 V at 14.0 GHz is tested. It fully shows the advantages of the GaN power device.",

keywords = "GaN transistor, Internal matching, Ku-band",

author = "Shichang Zhong and Tangsheng Chen and Feng Qian and Chen Chen and Tao Gao",

year = "2014",

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day = "1",

language = "English",

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pages = "350--353",

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TY - JOUR

T1 - Ku-band 60 W AlGaN/GaN internally matched power HEMT

AU - Zhong, Shichang

AU - Chen, Tangsheng

AU - Qian, Feng

AU - Chen, Chen

AU - Gao, Tao

PY - 2014/8/1

Y1 - 2014/8/1

N2 - The paper researches the Ku- band 60 W AlGaN/GaN internal matching technology. Using two 10.8 mm GaN power HEMT transistors made by Nanjing Electric Devices Institute, the internally matched transistor demonstrates an pulse output power of more than 60 W with a power gain of over 6 dB across the band of 14.0~14.5 GHz, at operating drain bias voltage of 28 V. And the maximum pulse output power of 66 W with PAE of 33.1% under Vds of 28 V at 14.0 GHz is tested. It fully shows the advantages of the GaN power device.

AB - The paper researches the Ku- band 60 W AlGaN/GaN internal matching technology. Using two 10.8 mm GaN power HEMT transistors made by Nanjing Electric Devices Institute, the internally matched transistor demonstrates an pulse output power of more than 60 W with a power gain of over 6 dB across the band of 14.0~14.5 GHz, at operating drain bias voltage of 28 V. And the maximum pulse output power of 66 W with PAE of 33.1% under Vds of 28 V at 14.0 GHz is tested. It fully shows the advantages of the GaN power device.

KW - GaN transistor

KW - Internal matching

KW - Ku-band

UR - http://www.scopus.com/inward/record.url?scp=84907088516&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:84907088516

SN - 1000-3819

VL - 34

SP - 350

EP - 353

JO - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

JF - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

IS - 4

ER -

Ku-band 60 W AlGaN/GaN internally matched power HEMT

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