摘要
n-Type organic/polymeric semiconductors with high electron mobilities are highly demanded for future flexible organic circuits. Except for developing a new conjugated backbone, recent studies show that side-chain engineering also plays an indispensable role in boosting the charge-transporting property. In this paper, we report a new polymer PNDI2T-DTD with a representative n-type naphthalene diimide (NDI)-bithiophene backbone for high-performance n-type flexible thin-film transistors through branching/linear side-chain engineering strategy. Serving as the flexible side chains, the linear/branching side-chain pattern is found to be effective in tuning the preaggregation behavior in solution and the packing ordering of polymeric chains, resulting in the improvement of thin-film crystallinity. The electron mobility of the thin film of PNDI2T-DTD on flexible substrates can reach 1.52 cm 2 V -1 s -1 , which is approximately five times higher than that of PNDI2T-DT with the same conjugated backbone and only branching alkyl chains.
源语言 | 英语 |
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页(从-至) | 15837-15844 |
页数 | 8 |
期刊 | ACS applied materials & interfaces |
卷 | 11 |
期 | 17 |
DOI | |
出版状态 | 已出版 - 1 5月 2019 |