TY - JOUR
T1 - Highly Stable Perovskite Photodetector Based on Vapor-Processed Micrometer-Scale CsPbBr3 Microplatelets
AU - Li, Ying
AU - Shi, Zhifeng
AU - Lei, Lingzhi
AU - Zhang, Fei
AU - Ma, Zhuangzhuang
AU - Wu, Di
AU - Xu, Tingting
AU - Tian, Yongtao
AU - Zhang, Yuantao
AU - Du, Guotong
AU - Shan, Chongxin
AU - Li, Xinjian
N1 - Publisher Copyright:
© 2018 American Chemical Society.
PY - 2018/10/9
Y1 - 2018/10/9
N2 - Recently, halide perovskites have attracted tremendous attention because of their great abilities in large-scale and cost-effective manufacturing of optoelectronic devices. Here, a novel photodetector configuration was proposed by employing vapor-processed micrometer-scale inorganic CsPbBr3 microplatelets as the light absorber. Temperature-dependent steady-state and time-resolved photoluminescence spectra were first recorded to study the emission mechanisms and carrier recombination dynamics of the CsPbBr3 microplatelets. Furthermore, a photoconductive detector was prepared, and the device exhibits good performances with a high on/off photocurrent ratio of 4.6 × 103, a responsivity of ∼.33 A/W, and a specific detectivity of 0.86 × 1012 jones. Additionally, temperature-dependent current-voltage and current-time characteristics of the photodetector were studied to assess the thermal effects on its photodetection ability. In particular, the unencapsulated photodetector demonstrates a prominent stability over the long-term temperature endurance measure in ambient air. Even operated at 373 K, the photodetector can operate properly, showing a high temperature resistance. Moreover, the device performance can almost be retained even with a 7 month storage in air. The experimental results suggest that the CsPbBr3 microplatelets can serve as a good candidate for the fabrication of high-performance photodetectors compatible with practical applications.
AB - Recently, halide perovskites have attracted tremendous attention because of their great abilities in large-scale and cost-effective manufacturing of optoelectronic devices. Here, a novel photodetector configuration was proposed by employing vapor-processed micrometer-scale inorganic CsPbBr3 microplatelets as the light absorber. Temperature-dependent steady-state and time-resolved photoluminescence spectra were first recorded to study the emission mechanisms and carrier recombination dynamics of the CsPbBr3 microplatelets. Furthermore, a photoconductive detector was prepared, and the device exhibits good performances with a high on/off photocurrent ratio of 4.6 × 103, a responsivity of ∼.33 A/W, and a specific detectivity of 0.86 × 1012 jones. Additionally, temperature-dependent current-voltage and current-time characteristics of the photodetector were studied to assess the thermal effects on its photodetection ability. In particular, the unencapsulated photodetector demonstrates a prominent stability over the long-term temperature endurance measure in ambient air. Even operated at 373 K, the photodetector can operate properly, showing a high temperature resistance. Moreover, the device performance can almost be retained even with a 7 month storage in air. The experimental results suggest that the CsPbBr3 microplatelets can serve as a good candidate for the fabrication of high-performance photodetectors compatible with practical applications.
UR - http://www.scopus.com/inward/record.url?scp=85054271014&partnerID=8YFLogxK
U2 - 10.1021/acs.chemmater.8b02435
DO - 10.1021/acs.chemmater.8b02435
M3 - Article
AN - SCOPUS:85054271014
SN - 0897-4756
VL - 30
SP - 6744
EP - 6755
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 19
ER -