Highly linear active bias LNA with 0.5 dB noise figure

Jian Wu; Yuan Zheng; Xuan Ai; Xiaoyu Gu; Yanqing Zhu; Xinyu Chen; Lei Yang; Feng Qian

Highly linear active bias LNA with 0.5 dB noise figure

Jian Wu^*, Yuan Zheng, Xuan Ai, Xiaoyu Gu, Yanqing Zhu, Xinyu Chen, Lei Yang, Feng Qian

^*此作品的通讯作者

科研成果: 期刊稿件 › 文章 › 同行评审

1 引用（Scopus）

摘要

A wideband active bias low noise amplifier with 0.48 dB noise figure is presented. By employing the 0.5 μm GaAs enhancement-mode pHEMT process, the LNA has achieved low noise, high gain and high linearity. The LNA is housed in a 2.0 mm×2.0 mm×0.75 mm miniature package with 8-pin dual-flat-lead (DFN). It is believed that this LNA is an ideal choice for GSM and CDMA cellular infrastructure.

源语言	英语
页（从-至）	211-215
页数	5
期刊	Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
卷	34
期	3
出版状态	已出版 - 6月 2014
已对外发布	是

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title = "Highly linear active bias LNA with 0.5 dB noise figure",

abstract = "A wideband active bias low noise amplifier with 0.48 dB noise figure is presented. By employing the 0.5 μm GaAs enhancement-mode pHEMT process, the LNA has achieved low noise, high gain and high linearity. The LNA is housed in a 2.0 mm×2.0 mm×0.75 mm miniature package with 8-pin dual-flat-lead (DFN). It is believed that this LNA is an ideal choice for GSM and CDMA cellular infrastructure.",

keywords = "Active bias, High gain, High linearity, Low noise amplifier(LNA)",

author = "Jian Wu and Yuan Zheng and Xuan Ai and Xiaoyu Gu and Yanqing Zhu and Xinyu Chen and Lei Yang and Feng Qian",

year = "2014",

month = jun,

language = "English",

volume = "34",

pages = "211--215",

journal = "Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics",

issn = "1000-3819",

publisher = "Research Progress of Solid State Electronics",

number = "3",

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TY - JOUR

T1 - Highly linear active bias LNA with 0.5 dB noise figure

AU - Wu, Jian

AU - Zheng, Yuan

AU - Ai, Xuan

AU - Gu, Xiaoyu

AU - Zhu, Yanqing

AU - Chen, Xinyu

AU - Yang, Lei

AU - Qian, Feng

PY - 2014/6

Y1 - 2014/6

N2 - A wideband active bias low noise amplifier with 0.48 dB noise figure is presented. By employing the 0.5 μm GaAs enhancement-mode pHEMT process, the LNA has achieved low noise, high gain and high linearity. The LNA is housed in a 2.0 mm×2.0 mm×0.75 mm miniature package with 8-pin dual-flat-lead (DFN). It is believed that this LNA is an ideal choice for GSM and CDMA cellular infrastructure.

AB - A wideband active bias low noise amplifier with 0.48 dB noise figure is presented. By employing the 0.5 μm GaAs enhancement-mode pHEMT process, the LNA has achieved low noise, high gain and high linearity. The LNA is housed in a 2.0 mm×2.0 mm×0.75 mm miniature package with 8-pin dual-flat-lead (DFN). It is believed that this LNA is an ideal choice for GSM and CDMA cellular infrastructure.

KW - Active bias

KW - High gain

KW - High linearity

KW - Low noise amplifier(LNA)

UR - http://www.scopus.com/inward/record.url?scp=84904470924&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:84904470924

SN - 1000-3819

VL - 34

SP - 211

EP - 215

JO - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

JF - Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics

IS - 3

ER -

Highly linear active bias LNA with 0.5 dB noise figure

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