Gd on GaN(0001) surface: Growth, interaction, and Fermi level movement

Wende Xiao; Qinlin Quo; Qikun Xue; E. G. Wang

doi:10.1063/1.1609636

Gd on GaN(0001) surface: Growth, interaction, and Fermi level movement

Wende Xiao, Qinlin Quo, Qikun Xue, E. G. Wang

CAS - Institute of Physics

科研成果: 期刊稿件 › 文章 › 同行评审

8 引用（Scopus）

摘要

The growth, interfacial reaction, and Fermi level movement of Gd on n-type GaN(0001)-(1×1) surface were studied by using x-ray photoelectron spectroscopy. It was observed that the annealing promotes further diffusion and an interfacial Gd-Ga exchange reaction which reduces the Schottky barrier height. It was found that the Gd grows in a layer-by-layer-like mode and reacts with the substrate at the interface which lead to the formation of metallic Ga at room temperature.

源语言	英语
页（从-至）	4847-4852
页数	6
期刊	Journal of Applied Physics
卷	94
期	8
DOI	https://doi.org/10.1063/1.1609636
出版状态	已出版 - 15 10月 2003
已对外发布	是

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abstract = "The growth, interfacial reaction, and Fermi level movement of Gd on n-type GaN(0001)-(1×1) surface were studied by using x-ray photoelectron spectroscopy. It was observed that the annealing promotes further diffusion and an interfacial Gd-Ga exchange reaction which reduces the Schottky barrier height. It was found that the Gd grows in a layer-by-layer-like mode and reacts with the substrate at the interface which lead to the formation of metallic Ga at room temperature.",

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AU - Xiao, Wende

AU - Quo, Qinlin

AU - Xue, Qikun

AU - Wang, E. G.

PY - 2003/10/15

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N2 - The growth, interfacial reaction, and Fermi level movement of Gd on n-type GaN(0001)-(1×1) surface were studied by using x-ray photoelectron spectroscopy. It was observed that the annealing promotes further diffusion and an interfacial Gd-Ga exchange reaction which reduces the Schottky barrier height. It was found that the Gd grows in a layer-by-layer-like mode and reacts with the substrate at the interface which lead to the formation of metallic Ga at room temperature.

AB - The growth, interfacial reaction, and Fermi level movement of Gd on n-type GaN(0001)-(1×1) surface were studied by using x-ray photoelectron spectroscopy. It was observed that the annealing promotes further diffusion and an interfacial Gd-Ga exchange reaction which reduces the Schottky barrier height. It was found that the Gd grows in a layer-by-layer-like mode and reacts with the substrate at the interface which lead to the formation of metallic Ga at room temperature.

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Gd on GaN(0001) surface: Growth, interaction, and Fermi level movement

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