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First-principles insights into Bi
2
XO
5
(X = Se, Te) monolayers as high-k gate dielectrics for 2D electronics
Huan Liu, Lixiang Rao, Junjie Qi,
Gang Tang
前沿交叉科学研究院
University of Science and Technology Beijing
North China Electric Power University
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2
XO
5
(X = Se, Te) monolayers as high-k gate dielectrics for 2D electronics' 的科研主题。它们共同构成独一无二的指纹。
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加权
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Material Science
Monolayers
100%
Dielectric Material
100%
Silicon
75%
Oxide Compound
50%
Permittivity
50%
Transistor
50%
Bismuth
50%
Band Offset
50%
Density
25%
Transition Metal Dichalcogenide
25%
Dielectric Property
25%
Layered Material
25%
Tellurite
25%
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