Few-Layer Mote2 Suspended Channel Transistors and Nanoelectromechanical Resonators

Xia Liu; Arnob Islam; Philip X.L. Feng

doi:10.1109/TRANSDUCERS.2019.8808667

Few-Layer Mote₂ Suspended Channel Transistors and Nanoelectromechanical Resonators

Xia Liu, Arnob Islam, Philip X.L. Feng

Case School of Engineering

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

9 引用（Scopus）

摘要

Molybdenum ditelluride (MoTe₂) is a rapidly emerging two-dimensional (2D) transition metal dichalcogenide (TMDC) layered material thanks to the features of low energy barrier for phase transition and the sizeable bandgap close to that of silicon (Si). These attractive features make it a focus of substantial research interest in future nanoelectronics. Here, we report on the first demonstration of few-layer MoTe2 suspended channel transistors (SCTs) and nanoelectromechanical resonators operating in the high frequency (HF) regime. MoTe₂ SCTs exhibit On/Off ratio levels at I_On/I_Off ≈ 10⁴. We also present the passivation of MoTe₂ resonators by using hexagonal boron nitride (h-BN) crystal, which essentially creates h-BN/MoTe₂ heterostructure bimorphs. Moreover, we investigate the electrical tuning of the resonator and observe resonance frequency tuning of Δf/f ≈ 13% by varying gate voltage (V_G) from 0 to -16V.

源语言	英语
主期刊名	2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII
出版商	Institute of Electrical and Electronics Engineers Inc.
页	2408-2411
页数	4
ISBN（电子版）	9781728120072
DOI	https://doi.org/10.1109/TRANSDUCERS.2019.8808667
出版状态	已出版 - 6月 2019
已对外发布	是
活动	20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII - Berlin, 德国期限: 23 6月 2019 → 27 6月 2019

出版系列

姓名	2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII

会议

会议	20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII
国家/地区	德国
市	Berlin
时期	23/06/19 → 27/06/19

访问文件

10.1109/TRANSDUCERS.2019.8808667

其它文件与链接

链接到 Scopus 的出版物

引用此

Liu, X., Islam, A., & Feng, P. X. L. (2019). Few-Layer Mote₂ Suspended Channel Transistors and Nanoelectromechanical Resonators. 在 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII (页码 2408-2411). 文章 8808667 (2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/TRANSDUCERS.2019.8808667

Liu, Xia ; Islam, Arnob ; Feng, Philip X.L. / Few-Layer Mote₂ Suspended Channel Transistors and Nanoelectromechanical Resonators. 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII. Institute of Electrical and Electronics Engineers Inc., 2019. 页码 2408-2411 (2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII).

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title = "Few-Layer Mote2 Suspended Channel Transistors and Nanoelectromechanical Resonators",

abstract = "Molybdenum ditelluride (MoTe2) is a rapidly emerging two-dimensional (2D) transition metal dichalcogenide (TMDC) layered material thanks to the features of low energy barrier for phase transition and the sizeable bandgap close to that of silicon (Si). These attractive features make it a focus of substantial research interest in future nanoelectronics. Here, we report on the first demonstration of few-layer MoTe2 suspended channel transistors (SCTs) and nanoelectromechanical resonators operating in the high frequency (HF) regime. MoTe2 SCTs exhibit On/Off ratio levels at IOn/IOff ≈ 104. We also present the passivation of MoTe2 resonators by using hexagonal boron nitride (h-BN) crystal, which essentially creates h-BN/MoTe2 heterostructure bimorphs. Moreover, we investigate the electrical tuning of the resonator and observe resonance frequency tuning of Δf/f ≈ 13% by varying gate voltage (VG) from 0 to -16V.",

keywords = "2D materials, MoTe, Nanoelectromechanical systems (NEMS), frequency tuning., optical interferometry, resonator, suspended channel transistor",

author = "Xia Liu and Arnob Islam and Feng, {Philip X.L.}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII ; Conference date: 23-06-2019 Through 27-06-2019",

year = "2019",

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doi = "10.1109/TRANSDUCERS.2019.8808667",

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series = "2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Liu, X, Islam, A & Feng, PXL 2019, Few-Layer Mote₂ Suspended Channel Transistors and Nanoelectromechanical Resonators. 在 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII., 8808667, 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII, Institute of Electrical and Electronics Engineers Inc., 页码 2408-2411, 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII, Berlin, 德国, 23/06/19. https://doi.org/10.1109/TRANSDUCERS.2019.8808667

Few-Layer Mote₂ Suspended Channel Transistors and Nanoelectromechanical Resonators. / Liu, Xia; Islam, Arnob; Feng, Philip X.L.
2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII. Institute of Electrical and Electronics Engineers Inc., 2019. 页码 2408-2411 8808667 (2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII).

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

TY - GEN

T1 - Few-Layer Mote2 Suspended Channel Transistors and Nanoelectromechanical Resonators

AU - Liu, Xia

AU - Islam, Arnob

AU - Feng, Philip X.L.

PY - 2019/6

Y1 - 2019/6

N2 - Molybdenum ditelluride (MoTe2) is a rapidly emerging two-dimensional (2D) transition metal dichalcogenide (TMDC) layered material thanks to the features of low energy barrier for phase transition and the sizeable bandgap close to that of silicon (Si). These attractive features make it a focus of substantial research interest in future nanoelectronics. Here, we report on the first demonstration of few-layer MoTe2 suspended channel transistors (SCTs) and nanoelectromechanical resonators operating in the high frequency (HF) regime. MoTe2 SCTs exhibit On/Off ratio levels at IOn/IOff ≈ 104. We also present the passivation of MoTe2 resonators by using hexagonal boron nitride (h-BN) crystal, which essentially creates h-BN/MoTe2 heterostructure bimorphs. Moreover, we investigate the electrical tuning of the resonator and observe resonance frequency tuning of Δf/f ≈ 13% by varying gate voltage (VG) from 0 to -16V.

AB - Molybdenum ditelluride (MoTe2) is a rapidly emerging two-dimensional (2D) transition metal dichalcogenide (TMDC) layered material thanks to the features of low energy barrier for phase transition and the sizeable bandgap close to that of silicon (Si). These attractive features make it a focus of substantial research interest in future nanoelectronics. Here, we report on the first demonstration of few-layer MoTe2 suspended channel transistors (SCTs) and nanoelectromechanical resonators operating in the high frequency (HF) regime. MoTe2 SCTs exhibit On/Off ratio levels at IOn/IOff ≈ 104. We also present the passivation of MoTe2 resonators by using hexagonal boron nitride (h-BN) crystal, which essentially creates h-BN/MoTe2 heterostructure bimorphs. Moreover, we investigate the electrical tuning of the resonator and observe resonance frequency tuning of Δf/f ≈ 13% by varying gate voltage (VG) from 0 to -16V.

KW - 2D materials

KW - MoTe

KW - Nanoelectromechanical systems (NEMS)

KW - frequency tuning.

KW - optical interferometry

KW - resonator

KW - suspended channel transistor

UR - http://www.scopus.com/inward/record.url?scp=85071924671&partnerID=8YFLogxK

U2 - 10.1109/TRANSDUCERS.2019.8808667

DO - 10.1109/TRANSDUCERS.2019.8808667

M3 - Conference contribution

AN - SCOPUS:85071924671

T3 - 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII

SP - 2408

EP - 2411

BT - 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII

Y2 - 23 June 2019 through 27 June 2019

ER -

Liu X, Islam A, Feng PXL. Few-Layer Mote₂ Suspended Channel Transistors and Nanoelectromechanical Resonators. 在 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII. Institute of Electrical and Electronics Engineers Inc. 2019. 页码 2408-2411. 8808667. (2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII). doi: 10.1109/TRANSDUCERS.2019.8808667

Few-Layer Mote2 Suspended Channel Transistors and Nanoelectromechanical Resonators

摘要

出版系列

会议

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其它文件与链接

指纹

引用此

Few-Layer Mote₂ Suspended Channel Transistors and Nanoelectromechanical Resonators