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Electronic Properties of Multilayer MoS
2
Field Effect Transistor with Unique Irradiation Resistance
Yifan Zhang, Xiaofei Chen, Heshen Wang, Junfeng Dai, Jianming Xue,
Xun Guo
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此作品的通讯作者
Peking University
China Institute of Nuclear Information and Economics
Southern University of Science and Technology
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引用 （Scopus）
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2
Field Effect Transistor with Unique Irradiation Resistance' 的科研主题。它们共同构成独一无二的指纹。
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Engineering
Defects
40%
Electrical Measurement
20%
Energy Systems
20%
Field-Effect Transistor
100%
Low Power Consumption
20%
Molybdenum Disulfide
100%
Nanoelectronics
20%
Nuclear Energy
20%
Potential Application
20%
Space Application
20%
Threshold Energy
20%
Transmissions
20%
Two Dimensional
20%
Physics
Field Effect Transistor
100%
Fluence
33%
Helium Ion
66%
Ion Irradiation
66%
Photoluminescence
33%
Transmission Electron Microscopy
33%
Material Science
Electronic Property
100%
Field Effect Transistor
100%
Photoluminescence
33%
Scanning Transmission Electron Microscopy
33%