Electrical transport and photoresponse properties of single-crystalline p-type Cd₃As₂ nanowires

Cd₃As₂ is an important II–V group semiconductor with excellent electrical and optoelectronic properties. In this work, we report the large scale growth of single-crystalline Cd₃As₂ nanowires via a simple chemical vapor deposition method. Single nanowire field-effect transistors were fabricated with the as-grown Cd₃As₂ nanowires, which exhibited a high I_on/I_off of 10⁴ with a hole mobility of 6.02 cm²V⁻¹s⁻¹. Photoresponse properties of the Cd₃As₂ nanowires were also investigated by illuminating the nanowires with white light by varying intensities. Besides, flexible photodetectors were also fabricated on flexible PET substrate, showing excellent mechanical stablility and flexible electro-optical properties under various bending states and bending cycles. Our results indicate that Cd₃As₂ nanowires can be the basic material of next generation electronic and optoelectronic devices.