Electric field controlled spin- and valley-polarized edge states in silicene with extrinsic Rashba effect

科研成果: 期刊稿件文章同行评审

44 引用 (Scopus)
Plum Print visual indicator of research metrics
  • Citations
    • Citation Indexes: 44
  • Captures
    • Readers: 28
see details

摘要

In the presence of extrinsic Rashba spin-orbit coupling, we find that silicene can host a quantum anomalous Hall state with spin- and valley-polarized edge states, which can be effectively controlled by the exchange field and electric field. In this state, a pair of nontrivial edge states reside in one specific valley and have a strong but opposite spin polarization. A distinctive feature of this state is that both of the spin and valley indexes of the edge states can be switched by reversing the electric field. We also present a microscopic mechanism for the origin of this state. Our findings provide an efficient way to control the topologically protected spin- and valley-polarized edge states, which is crucial for spintronics and valleytronics.

源语言英语
文章编号155419
期刊Physical Review B - Condensed Matter and Materials Physics
92
15
DOI
出版状态已出版 - 14 10月 2015

指纹

探究 'Electric field controlled spin- and valley-polarized edge states in silicene with extrinsic Rashba effect' 的科研主题。它们共同构成独一无二的指纹。

引用此

Yu, Z., Pan, H., & Yao, Y. (2015). Electric field controlled spin- and valley-polarized edge states in silicene with extrinsic Rashba effect. Physical Review B - Condensed Matter and Materials Physics, 92(15), 文章 155419. https://doi.org/10.1103/PhysRevB.92.155419