Effects of Na doping on the distribution of elements and the formation of back surface field in CIGS absorption layer

Zhixiang Si; Qi Yuan; Spark Wang; Dongying Li; Ruijiang Hong; Junfeng Han; Limei Cha

doi:10.1007/s00339-022-06117-4

Effects of Na doping on the distribution of elements and the formation of back surface field in CIGS absorption layer

Zhixiang Si, Qi Yuan, Spark Wang, Dongying Li, Ruijiang Hong^*, Junfeng Han^*, Limei Cha^*

^*此作品的通讯作者

物理学院

科研成果: 期刊稿件 › 文章 › 同行评审

3 引用（Scopus）

摘要

In this research, the influences of Na doping content on the microstructure of CIGS absorption layer and the electrical performance of CIGS solar cell are investigated. It is found that Na is benefit to reducing the thickness of MoSe₂ layer which is between the CIGS absorption layer and Mo back contact layer, and decreasing the series resistance and improving the fill-factor of the cell. Besides, Na will influence the distribution of Ga. With the increase of the Na doping, Ga elements tend to accumulate at the back region of the CIGS absorption layer, and form a strong back surface field which reduces the carriers recombination. Those effects contribute to the improvement of the CIGS cells efficiency. Graphical abstract: [Figure not available: see fulltext.].

源语言	英语
文章编号	994
期刊	Applied Physics A: Materials Science and Processing
卷	128
期	11
DOI	https://doi.org/10.1007/s00339-022-06117-4
出版状态	已出版 - 11月 2022

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@article{67a4620e94784df29d6f2daada5ed0dd,

title = "Effects of Na doping on the distribution of elements and the formation of back surface field in CIGS absorption layer",

abstract = "In this research, the influences of Na doping content on the microstructure of CIGS absorption layer and the electrical performance of CIGS solar cell are investigated. It is found that Na is benefit to reducing the thickness of MoSe2 layer which is between the CIGS absorption layer and Mo back contact layer, and decreasing the series resistance and improving the fill-factor of the cell. Besides, Na will influence the distribution of Ga. With the increase of the Na doping, Ga elements tend to accumulate at the back region of the CIGS absorption layer, and form a strong back surface field which reduces the carriers recombination. Those effects contribute to the improvement of the CIGS cells efficiency. Graphical abstract: [Figure not available: see fulltext.].",

keywords = "Back surface filed, CuInGaSe, Electrical performance, Na doping, Thin-film solar cell",

author = "Zhixiang Si and Qi Yuan and Spark Wang and Dongying Li and Ruijiang Hong and Junfeng Han and Limei Cha",

note = "Publisher Copyright: {\textcopyright} 2022, The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature.",

year = "2022",

month = nov,

doi = "10.1007/s00339-022-06117-4",

language = "English",

volume = "128",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

publisher = "Springer Heidelberg",

number = "11",

}

TY - JOUR

T1 - Effects of Na doping on the distribution of elements and the formation of back surface field in CIGS absorption layer

AU - Si, Zhixiang

AU - Yuan, Qi

AU - Wang, Spark

AU - Li, Dongying

AU - Hong, Ruijiang

AU - Han, Junfeng

AU - Cha, Limei

PY - 2022/11

Y1 - 2022/11

N2 - In this research, the influences of Na doping content on the microstructure of CIGS absorption layer and the electrical performance of CIGS solar cell are investigated. It is found that Na is benefit to reducing the thickness of MoSe2 layer which is between the CIGS absorption layer and Mo back contact layer, and decreasing the series resistance and improving the fill-factor of the cell. Besides, Na will influence the distribution of Ga. With the increase of the Na doping, Ga elements tend to accumulate at the back region of the CIGS absorption layer, and form a strong back surface field which reduces the carriers recombination. Those effects contribute to the improvement of the CIGS cells efficiency. Graphical abstract: [Figure not available: see fulltext.].

AB - In this research, the influences of Na doping content on the microstructure of CIGS absorption layer and the electrical performance of CIGS solar cell are investigated. It is found that Na is benefit to reducing the thickness of MoSe2 layer which is between the CIGS absorption layer and Mo back contact layer, and decreasing the series resistance and improving the fill-factor of the cell. Besides, Na will influence the distribution of Ga. With the increase of the Na doping, Ga elements tend to accumulate at the back region of the CIGS absorption layer, and form a strong back surface field which reduces the carriers recombination. Those effects contribute to the improvement of the CIGS cells efficiency. Graphical abstract: [Figure not available: see fulltext.].

KW - Back surface filed

KW - CuInGaSe

KW - Electrical performance

KW - Na doping

KW - Thin-film solar cell

UR - http://www.scopus.com/inward/record.url?scp=85140316845&partnerID=8YFLogxK

U2 - 10.1007/s00339-022-06117-4

DO - 10.1007/s00339-022-06117-4

M3 - Article

AN - SCOPUS:85140316845

SN - 0947-8396

VL - 128

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 11

M1 - 994

ER -

Effects of Na doping on the distribution of elements and the formation of back surface field in CIGS absorption layer

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