摘要
A design of four mirror imaging optics has been presented. The optics is designed for 50 nm at the wavelength of 13.5 nm. The exposure field is 25 mm×0.5 mm on wafer. The astigmatism and the distortion are corrected well in the ring field. The study shows a potential solution of four-mirror camera with numerical aperture (NA)≥0.15 for extreme ultraviolet lithography (EUVL). The ring is still not large enough to meet the requirements of EUVL.
源语言 | 英语 |
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页(从-至) | 759-764 |
页数 | 6 |
期刊 | Proceedings of SPIE - The International Society for Optical Engineering |
卷 | 3997 |
出版状态 | 已出版 - 2000 |
已对外发布 | 是 |
活动 | Emerging Lithographic Technologies IV - Santa Clara, CA, USA 期限: 28 2月 2000 → 1 3月 2000 |