TY - GEN
T1 - Design of Double Delta-Doped Al0.22Ga0.78As/In0.22Ga0.78A s Pseudomorphic HEMTs
AU - Wang, Zhiming
AU - Mou, Jinchao
AU - Yu, Weihua
AU - Lv, Xin
PY - 2012
Y1 - 2012
N2 - In this study, performances of double delta-doped AlGaAs/InGaAspseudomorphic high electron mobility transistors are investigated. Simulation results demonstrate good performance for this structure. Form simulation, the structure demonstrates a maximum current gain cutoff frequency of 145GHz for 100nm gate length, a peak extrinsic transconductance of 526mS/mm, and a maximum saturation current density of 350mA/mm.
AB - In this study, performances of double delta-doped AlGaAs/InGaAspseudomorphic high electron mobility transistors are investigated. Simulation results demonstrate good performance for this structure. Form simulation, the structure demonstrates a maximum current gain cutoff frequency of 145GHz for 100nm gate length, a peak extrinsic transconductance of 526mS/mm, and a maximum saturation current density of 350mA/mm.
KW - Delta-doped
KW - Pseudomorphic hemts
KW - Short channel effects
UR - http://www.scopus.com/inward/record.url?scp=84871378569&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMM.229-231.2007
DO - 10.4028/www.scientific.net/AMM.229-231.2007
M3 - Conference contribution
AN - SCOPUS:84871378569
SN - 9783037855102
T3 - Applied Mechanics and Materials
SP - 2007
EP - 2009
BT - Mechanical and Electrical Technology IV
T2 - 4th International Conference on Mechanical and Electrical Technology, ICMET 2012
Y2 - 24 July 2012 through 26 July 2012
ER -