TY - GEN
T1 - Design of a 220GHz 4X subharmonical mixer using terahertz GaAs Schottky diodes BITD1530A
AU - Chen, Ling
AU - Mou, Jingchao
AU - Xu, Mingming
AU - Yu, Weihua
AU - Lv, Xin
PY - 2012
Y1 - 2012
N2 - In this paper, we present the design and optimization of a 220GHz 4X subharmonical mixer based on an antiparallel pair of planar GaAs Schottky diodes BITDA1530 from Beijing Institute of Technology, which is flip-chipped onto the 100 um thick quartz microstrip circuit. The finline and E-plane probe waveguide to microstrip line transitions are adopted for coupling the RF and LO signal respectively. The optimized 4X subharmonical mixer exhibits that the double side band (DSB) conversion loss is below 25 dB over the range of 217-223 GHz, with the minimum of 21.5 dB under the LO level of 5 mW.
AB - In this paper, we present the design and optimization of a 220GHz 4X subharmonical mixer based on an antiparallel pair of planar GaAs Schottky diodes BITDA1530 from Beijing Institute of Technology, which is flip-chipped onto the 100 um thick quartz microstrip circuit. The finline and E-plane probe waveguide to microstrip line transitions are adopted for coupling the RF and LO signal respectively. The optimized 4X subharmonical mixer exhibits that the double side band (DSB) conversion loss is below 25 dB over the range of 217-223 GHz, with the minimum of 21.5 dB under the LO level of 5 mW.
UR - http://www.scopus.com/inward/record.url?scp=84864579523&partnerID=8YFLogxK
U2 - 10.1109/ICMMT.2012.6230290
DO - 10.1109/ICMMT.2012.6230290
M3 - Conference contribution
AN - SCOPUS:84864579523
SN - 9781467321839
T3 - 2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings
SP - 1400
EP - 1403
BT - 2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings
T2 - 2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012
Y2 - 5 May 2012 through 8 May 2012
ER -