Design of a 200GHz sub-harmonic mixer with planar Schottky diodes

Chengcheng Wan; Tong Fei; Ling Chen; Weihua Yu; Xin Lv

doi:10.1109/ICMTCE.2013.6812446

Design of a 200GHz sub-harmonic mixer with planar Schottky diodes

Chengcheng Wan, Tong Fei, Ling Chen, Weihua Yu, Xin Lv

集成电路与电子学院

科研成果: 会议稿件 › 论文 › 同行评审

2 引用（Scopus）

摘要

This paper presents the design and simulation results of a novel 200GHz sub-harmonic mixer. The device is based on an anti-parallel pair of GaAsSchottky diodes. The circuits are integrated with the IF filter and fabricated on a suspended quartz-based substrate. A best double sideband mixer conversion loss of 10.5dB was achieved with 6mW of LO power. Over an RF band of 183-220GHz, the double sideband mixer conversion loss is below 15dB.

源语言	英语
页	324-326
页数	3
DOI	https://doi.org/10.1109/ICMTCE.2013.6812446
出版状态	已出版 - 2013
活动	2013 3rd IEEE International Conference on Microwave Technology and Computational Electromagnetics, ICMTCE 2013 - Qingdao, 中国期限: 27 8月 2013 → 29 8月 2013

会议

会议	2013 3rd IEEE International Conference on Microwave Technology and Computational Electromagnetics, ICMTCE 2013
国家/地区	中国
市	Qingdao
时期	27/08/13 → 29/08/13

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10.1109/ICMTCE.2013.6812446

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title = "Design of a 200GHz sub-harmonic mixer with planar Schottky diodes",

abstract = "This paper presents the design and simulation results of a novel 200GHz sub-harmonic mixer. The device is based on an anti-parallel pair of GaAsSchottky diodes. The circuits are integrated with the IF filter and fabricated on a suspended quartz-based substrate. A best double sideband mixer conversion loss of 10.5dB was achieved with 6mW of LO power. Over an RF band of 183-220GHz, the double sideband mixer conversion loss is below 15dB.",

keywords = "GaAsSchottky diodes, sub-harmonic mixer, suspended quartz microstrip circuits",

author = "Chengcheng Wan and Tong Fei and Ling Chen and Weihua Yu and Xin Lv",

year = "2013",

doi = "10.1109/ICMTCE.2013.6812446",

language = "English",

pages = "324--326",

note = "2013 3rd IEEE International Conference on Microwave Technology and Computational Electromagnetics, ICMTCE 2013 ; Conference date: 27-08-2013 Through 29-08-2013",

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T1 - Design of a 200GHz sub-harmonic mixer with planar Schottky diodes

AU - Wan, Chengcheng

AU - Fei, Tong

AU - Chen, Ling

AU - Yu, Weihua

AU - Lv, Xin

PY - 2013

Y1 - 2013

N2 - This paper presents the design and simulation results of a novel 200GHz sub-harmonic mixer. The device is based on an anti-parallel pair of GaAsSchottky diodes. The circuits are integrated with the IF filter and fabricated on a suspended quartz-based substrate. A best double sideband mixer conversion loss of 10.5dB was achieved with 6mW of LO power. Over an RF band of 183-220GHz, the double sideband mixer conversion loss is below 15dB.

AB - This paper presents the design and simulation results of a novel 200GHz sub-harmonic mixer. The device is based on an anti-parallel pair of GaAsSchottky diodes. The circuits are integrated with the IF filter and fabricated on a suspended quartz-based substrate. A best double sideband mixer conversion loss of 10.5dB was achieved with 6mW of LO power. Over an RF band of 183-220GHz, the double sideband mixer conversion loss is below 15dB.

KW - GaAsSchottky diodes

KW - sub-harmonic mixer

KW - suspended quartz microstrip circuits

UR - http://www.scopus.com/inward/record.url?scp=84901473666&partnerID=8YFLogxK

U2 - 10.1109/ICMTCE.2013.6812446

DO - 10.1109/ICMTCE.2013.6812446

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EP - 326

T2 - 2013 3rd IEEE International Conference on Microwave Technology and Computational Electromagnetics, ICMTCE 2013

Y2 - 27 August 2013 through 29 August 2013

ER -

Design of a 200GHz sub-harmonic mixer with planar Schottky diodes

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