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Design and Transient Analysis of a 650 V/150 A GaN Power Modules With Integrated Bias Power and Gate-Drive Circuit
Liyan Zhu,
Yu Yan
, Hua Bai
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此作品的通讯作者
Virginia Tech College of Engineering
Analog Devices, Inc.
University of Tennessee
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Engineering
Design Analysis
100%
Gate Drive Circuit
100%
Nitride
100%
Power Supply
33%
Printed Circuit Board
33%
Pulse Test
33%
Thermal Resistance
33%
Transient Analysis
100%
Material Science
Electronic Circuit
100%
Gallium Nitride
100%
Heat Resistance
25%
Earth and Planetary Sciences
Gallium Nitride
100%
High Current
33%
Printed Circuit
33%
Thermal Resistance
33%